NANOSCALE THERMAL CLOAK BASED ON AMORPHOUS HOLE STRUCTURE OF SILICON FILM

With the continuous advancement of microelectronic devices towards miniaturization, diversification, and high frequencies, the excessive heat flux density within the device significantly affects its service life and operational stability. Thermal insulation is a commonly used method in thermal design. Researchers have developed thermal cloaks by transforming crystalline silicon films into functional regions. In previous work, a thermal cloak was successfully created through perforation. However, the perforated structure does not support the stability of the system. In this paper, we aim to construct a thermal cloak by filling the perforated region with an amorphous structure. This approach is designed to ensure both cloaking performance and system stability. We evaluate the cloaking performance by the ratio of thermal cloaking (RTC) and explain its cloaking mechanism through phonon localization theory. We find that the main reason for cloaking generation is the phonon localization phenomenon in the functional region. Our study is valuable for advancing the development of nanoscale thermal cloaks and can serve as a reference for the development of other nanoscale thermal functional devices.