Multilayer InSe-Te van der Waals Heterostructures with an Ultrahigh Rectification Ratio and Ultrasensitive Photoresponse

Multilayer van der Waals (vdWs) semiconductors have promising applications in high-performance optoelectronic devices. However, photoconductive photodetectors based on layered semiconductors often suffer from sizeable dark currents and high external driving bias voltages. Here, we report vertical van der Waals heterostructures (vdWHs) consisting of multilayer indium selenide (InSe) and tellurium (Te). The multilayer InSe-Te vdWH device shows a record high forward rectification ratio greater than 107 at room temperature. The vdWH device achieves an ultrasensitive and broadband photoresponse photodetector with an ultrahigh photo/dark current ratio over 104 and a high detectivity of 1013 Jones under visible light illumination with weak incident power. Moreover, the vdWH device has a photovoltaic effect and can function as a self-powered photodetector (SPPD). The SPPD is also ultrasensitive to a broadband spectrum ranging from 300 to 1000 nm and is capable of detecting weak light signals. This work offers an opportunity to develop next-generation electronic and optoelectronic devices based on multilayer vdWs materials.