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Multi-photon resonant ionization of xenon in the vicinity of 440 nm

  • National Key Laboratory of Science and Technology on Advanced Composites in Special Environment

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

By combining the pulse molecular beam technique and time of flight mass spectrum, the multiphoton resonance ionization of Xe in the vicinity of 440 nm is studied. The dependence of resonant ionization on laser energy and source pressure of Xe was analyzed and discussed. The resonant ionization spectrum near 440 nm was obtained and the AC Stark effect was determined to be the major cause of asymmetric line broadening in the low pressure multiphoton ionization spectrum of xenon. The results show that spectrum broadening could be ascribed to cooperative effects from different laser energy and electric field.

Original languageEnglish
Title of host publication2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010
Pages116-119
Number of pages4
DOIs
StatePublished - 2010
Externally publishedYes
Event2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010 - Harbin, China
Duration: 28 Jul 20101 Aug 2010

Publication series

Name2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010

Conference

Conference2010 Academic Symposium on Optoelectronics and Microelectronics Technology and 10th Chinese-Russian Symposium on Laser Physics and Laser Technology, RCSLPLT/ASOT 2010
Country/TerritoryChina
CityHarbin
Period28/07/101/08/10

Keywords

  • Multiphoton resonant ionization
  • Time-of-flight mass spectrum
  • Xe

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