Skip to main navigation Skip to search Skip to main content

Morphology instability of silicon nitride nanowires

  • Huatao Wang
  • , Weiyou Yang
  • , Zhipeng Xie*
  • , Yansong Wang
  • , Feng Xing
  • , Linan An
  • *Corresponding author for this work
  • Tsinghua University
  • Ningbo University of Technology
  • CAS - Changchun Institute of Optics Fine Mechanics and Physics
  • Shenzhen University
  • University of Central Florida

Research output: Contribution to journalArticlepeer-review

Abstract

We report that cylinder-shaped Si 3N 4 nanowires are not stable and can gradually transform into nanobelts via surface diffusion during high-temperature annealing. We demonstrate that such instability is driven by the requirements for reducing overall surface energy. The resultant nanobelts have the same width-to-thickness ratio, suggesting a stable morphology. A model in terms of surface energy is proposed to explain the formation of such stable morphology, which agrees well with experimental results. Our result suggests that instability could be a limiting factor for high-temperature applications of 1D nanostructures.

Original languageEnglish
Pages (from-to)5902-5905
Number of pages4
JournalJournal of Physical Chemistry C
Volume113
Issue number15
DOIs
StatePublished - 16 Apr 2009
Externally publishedYes

Fingerprint

Dive into the research topics of 'Morphology instability of silicon nitride nanowires'. Together they form a unique fingerprint.

Cite this