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Morphology dependence of cathodoluminescence from cubic boron nitride films deposited by chemical vapor deposition

  • J. Yu*
  • , H. C. Ong
  • , K. Y. Wong
  • , W. M. Lau
  • , S. Matsumoto
  • *Corresponding author for this work
  • Harbin Institute of Technology (Shenzhen)
  • Chinese University of Hong Kong
  • National Institute for Materials Science Tsukuba

Research output: Contribution to journalArticlepeer-review

Abstract

Morphology dependence of cathodoluminescence from cubic boron nitride (cBN) films was investigated in detail. Bright emission images were observed at surface pits and edge area of the film. Raman measurements show that hexagonal boron nitride (hBN) grows in the pits and edge area. The emission intensity of cathodoluminescence from the hBN was found to be 40-1000 times greater than that from cBN. The characteristic emission peak at 2.08 eV for cBN and that of hBN at 3.23 eV were determined. The peak position fluctuates between the above two peaks depending on the hBN concentration in cBN films.

Original languageEnglish
Article number124915
JournalJournal of Applied Physics
Volume99
Issue number12
DOIs
StatePublished - 2006
Externally publishedYes

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