Morphology control in the vapor-liquid-solid growth of SiC nanowires

Huatao Wang; Zhipeng Xie; Weiyou Yang; Jiyu Fang; Linan An

doi:10.1021/cg8002756

Morphology control in the vapor-liquid-solid growth of SiC nanowires

Huatao Wang
, Zhipeng Xie^*
, Weiyou Yang
, Jiyu Fang
, Linan An

^*Corresponding author for this work

Tsinghua University
Ningbo University of Technology
University of Central Florida

Research output: Contribution to journal › Article › peer-review

80 Scopus citations

Abstract

In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.

Original language	English
Pages (from-to)	3893-3896
Number of pages	4
Journal	Crystal Growth and Design
Volume	8
Issue number	11
DOIs	https://doi.org/10.1021/cg8002756
State	Published - Nov 2008
Externally published	Yes

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10.1021/cg8002756

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@article{81eef3172fd74d65872b85dc81234faa,

title = "Morphology control in the vapor-liquid-solid growth of SiC nanowires",

abstract = "In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.",

author = "Huatao Wang and Zhipeng Xie and Weiyou Yang and Jiyu Fang and Linan An",

year = "2008",

month = nov,

doi = "10.1021/cg8002756",

language = "英语",

volume = "8",

pages = "3893--3896",

journal = "Crystal Growth and Design",

issn = "1528-7483",

publisher = "American Chemical Society",

number = "11",

}

TY - JOUR

T1 - Morphology control in the vapor-liquid-solid growth of SiC nanowires

AU - Wang, Huatao

AU - Xie, Zhipeng

AU - Yang, Weiyou

AU - Fang, Jiyu

AU - An, Linan

PY - 2008/11

Y1 - 2008/11

N2 - In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.

AB - In this paper, we report a new technique to manipulate and control the morphology of vapor-liquid-solid (VLS) grown SiC nanowires by varying the pressure of the source species. We demonstrate that the diameter of the nanowires is strongly related to the pressure and pressure variation rate of the source species. SiC nanowires with Eiffel-tower shape, spindle shape, and modulated diameters and periods have been synthesized. In principle, the technique is applicable to other material systems.

UR - https://www.scopus.com/pages/publications/61549138380

U2 - 10.1021/cg8002756

DO - 10.1021/cg8002756

M3 - 文章

AN - SCOPUS:61549138380

SN - 1528-7483

VL - 8

SP - 3893

EP - 3896

JO - Crystal Growth and Design

JF - Crystal Growth and Design

IS - 11

ER -

Morphology control in the vapor-liquid-solid growth of SiC nanowires

Abstract

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