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Molecular dynamics study of the impact of coordination number on the thermal conductivity of amorphous Ga2O3

  • School of Energy Science and Engineering, Harbin Institute of Technology
  • Ministry of Industry and Information Technology
  • Shaanxi Normal University
  • Guangdong University of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

Gallium oxide (Ga2O3) has emerged as a promising ultra-wide bandgap semiconductor for next-generation power electronics and optoelectronic devices. However, the thermal transport properties of Ga2O3, particularly in its amorphous state, remain poorly understood, even though they are critically important for device reliability. In this work, we employed molecular dynamics simulations with a machine-learned neuroevolution potential (NEP) to investigate the structure-thermal property relationship between structure and thermal properties in a-Ga2O3 across a comprehensive density range (3.5–8.0 g/cm3). Through systematic analysis of radial distribution functions, angular distributions, and coordination environments, we identify two distinct structural transitions at 5.25 g/cm3 and 6.50 g/cm3, corresponding to the progressive transformation of Ga coordination from fourfold to sixfold coordination and O coordination from threefold to fourfold. Homogeneous nonequilibrium MD simulations coupled with spectral heat current analysis reveal that these structural changes induce sharp enhancements in thermal conductivity, mediated through simultaneous improvements in both propagons and diffusons. The increase in atomic coordination creates more direct atomic pathways while strengthening interatomic coupling, ultimately enabling a sixfold increase in thermal conductivity across the studied density range. Our findings establish fundamental structure-property relationships in a-Ga2O3 and suggest general design principles for thermal management in amorphous semiconductors undergoing coordination polyhedral transitions.

Original languageEnglish
Article number184111
Pages (from-to)1-11
Number of pages11
JournalPhysical Review B
Volume112
Issue number18
DOIs
StatePublished - 2026
Externally publishedYes

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