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Molecular dynamic simulation on combustion process of silicon-doped amorphous carbon film for heat-assisted magnetic recording

  • Qingkang Liu
  • , Longqiu Li*
  • , Cijun Shuai
  • *Corresponding author for this work
  • Jiangxi University of Science and Technology
  • Harbin Institute of Technology
  • Central South University

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Reactive molecular dynamics (MD) simulations are performed to investigate combustion process of silicon-doped amorphous carbon (a-C:Si) films for heat-assisted magnetic recording (HAMR). The evolution of atomic structure, system potential energy, O2 molecules consumption, number of Si-O bond and C-O bond are analyzed. The silica suboxide layers on the surfaces act as protecting layers and prevent the oxidation of carbon atoms at low temperatures. The a-C:Si film burns when temperature is above 1600 K. And it can be used as protective coating of HAMR disk.

Original languageEnglish
Title of host publication2018 Asia-Pacific Magnetic Recording Conference, APMRC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781538683781
DOIs
StatePublished - 2 Jul 2018
Event2018 Asia-Pacific Magnetic Recording Conference, APMRC 2018 - Shanghai, China
Duration: 15 Nov 201817 Nov 2018

Publication series

Name2018 Asia-Pacific Magnetic Recording Conference, APMRC 2018

Conference

Conference2018 Asia-Pacific Magnetic Recording Conference, APMRC 2018
Country/TerritoryChina
CityShanghai
Period15/11/1817/11/18

Keywords

  • Combustion
  • HAMR
  • ReaxFF simulations
  • Silicon-doped Amorphous carbon

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