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Moiré method for nanoprecision wafer-to-wafer alignment: Theory, simulation and application

  • Chenxi Wang*
  • , Tadatomo Suga
  • *Corresponding author for this work
  • The University of Tokyo

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The two dimensional (2D) moiré centrosymmetric grating is developed to assist realization of high-precision wafer-to-wafer alignment and non-destructive measurement of misalignments for wafer bonding. Using these moiré patterns the misalignments in the order of ± 64 nm in X-Y axis can be resolved by a simple IR microscopy (5x objective) images. This value can be further improved to sub-10 nm range if the sub-pixel estimation is performed. For current status, the limit of the minimum resolved misalignment using moiré gratings is ∼0.2 nm according to theoretical analysis. It can be applied for not only the future 3D integration of wafer-scale, but also the fabrication of 3D nanostructures and advanced lithography techniques.

Original languageEnglish
Title of host publication2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages219-224
Number of pages6
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China
Duration: 10 Aug 200913 Aug 2009

Publication series

Name2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Conference

Conference2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Country/TerritoryChina
CityBeijing
Period10/08/0913/08/09

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