TY - GEN
T1 - Modeling Capacitive-Loaded Unintentional Stubs in High-Speed Channels
AU - Vicari, Nicolò
AU - Rabinovich, Rick
AU - Kocsis, Samuel
AU - Mammenga, Kevin
AU - Zhang, Gang
AU - Olivieri, Carlo
AU - de Paulis, Francesco
N1 - Publisher Copyright:
© 2025 IEEE.
PY - 2025
Y1 - 2025
N2 - The increasing channel bandwidth requirements needed for next generation high-speed serial interfaces extends where notch stubs appear, due to tiny channel discontinuities previously negligible. The impact of such hanging stubs is exacerbated by nearby reference planes due to the parasitic capacitance of the loaded stub. Based on the example of a mated connector at the spring to pad interface, the analytical calculation of the fringing capacitance and of the corresponding downshift of the stub resonance is proposed. Practical examples are presented to demonstrate the need for predicting such frequency downshift.
AB - The increasing channel bandwidth requirements needed for next generation high-speed serial interfaces extends where notch stubs appear, due to tiny channel discontinuities previously negligible. The impact of such hanging stubs is exacerbated by nearby reference planes due to the parasitic capacitance of the loaded stub. Based on the example of a mated connector at the spring to pad interface, the analytical calculation of the fringing capacitance and of the corresponding downshift of the stub resonance is proposed. Practical examples are presented to demonstrate the need for predicting such frequency downshift.
UR - https://www.scopus.com/pages/publications/105032688627
U2 - 10.1109/WAI67900.2025.11309282
DO - 10.1109/WAI67900.2025.11309282
M3 - 会议稿件
AN - SCOPUS:105032688627
T3 - 2025 International Workshop on Advanced Interconnects, WAI 2025
BT - 2025 International Workshop on Advanced Interconnects, WAI 2025
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2025 International Workshop on Advanced Interconnects, WAI 2025
Y2 - 5 November 2025 through 7 November 2025
ER -