Minority carrier distribution and frequency domain response characteristic research in p-n junction excitated by modulation laser

Based on the solar cell nonlinear coupled equations, space distribution and frequency response characteristics of excess minority carriers in silicon solar cell excitated by modulation laser have been studied by simulation analysis in order to build a model for detecting solar cells. The relations between excess carrier distribution in base region, depletion layer, emitter region and super bandwide modulation laser wavelength, power density and the modulation frequency are simulated. Through the simulation results, the optimal parameter ranges are selected, and the carrier radiation frequency-domain response and the influence of carrier lifetime on frequency-domain response have been analyzed. The simulation results show that modulation laser parameters have great influence on carrier distribution in silicon solar cells, and the excess carrier concentration increases nonlinearly with the scanning frequency. Finally, verification experiment on the silicon-based solar cell is carried out, and experimental results are in good agreement with the simulation results, which shows that the used simulation method can predict testing results of photocarrier radiation.