Abstract
The Al-50Si alloy, as a kind of potential electronic packaging material, is manufactured by different methods, such as casting and spray deposition. The possible influences of the P refiner on the microstructure of the Al-50Si alloy are investigated at different cooling rates. The refinement mechanism of primary Si phase is discussed in view of the P refiner addition, and the variation of the cooling rates. The thermal conductivity (TC), as a key parameter for electronic materials, is measured. The coupled effects of the cooling rate and the addition of the P refiner during the solidification of the Al-50Si alloy on the TC are elucidated based on structural observations. Furthermore, the porosity in the Al-50Si alloy is treated as a second phase influencing the TC.
| Original language | English |
|---|---|
| Pages (from-to) | 2948-2955 |
| Number of pages | 8 |
| Journal | Journal of Materials Research |
| Volume | 31 |
| Issue number | 19 |
| DOIs | |
| State | Published - 14 Oct 2016 |
| Externally published | Yes |
Keywords
- hypereutectic Al-high Si alloys
- microstructure
- spray-deposited
- thermal conductivity
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