Microstructure and properties of Sip/Al-20 wt% Si composite prepared by hot-pressed sintering technology

Jun Liu; Ziyang Xiu; Xue Liang; Qiang Li; Murid Hussain; Jing Qiao; Longtao Jiang

doi:10.1007/s10853-013-7821-8

Microstructure and properties of Sip/Al-20 wt% Si composite prepared by hot-pressed sintering technology

Jun Liu
, Ziyang Xiu^*
, Xue Liang
, Qiang Li
, Murid Hussain
, Jing Qiao
, Longtao Jiang

^*Corresponding author for this work

Harbin Institute of Technology
Shanghai University
COMSATS University Islamabad

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In the present work, 50 vol% Sip/Al-20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al-20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al-20Si composite were 11.7 × 10^-6/C and 118 W/(m K), respectively. Sip/Al-20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al-20Si composite very attractive for application in electron packaging.

Original language	English
Pages (from-to)	1368-1375
Number of pages	8
Journal	Journal of Materials Science
Volume	49
Issue number	3
DOIs	https://doi.org/10.1007/s10853-013-7821-8
State	Published - Feb 2014
Externally published	Yes

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title = "Microstructure and properties of Sip/Al-20 wt\% Si composite prepared by hot-pressed sintering technology",

abstract = "In the present work, 50 vol\% Sip/Al-20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al-20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al-20Si composite were 11.7 × 10-6/C and 118 W/(m K), respectively. Sip/Al-20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al-20Si composite very attractive for application in electron packaging.",

author = "Jun Liu and Ziyang Xiu and Xue Liang and Qiang Li and Murid Hussain and Jing Qiao and Longtao Jiang",

year = "2014",

month = feb,

doi = "10.1007/s10853-013-7821-8",

language = "英语",

volume = "49",

pages = "1368--1375",

journal = "Journal of Materials Science",

issn = "0022-2461",

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}

TY - JOUR

T1 - Microstructure and properties of Sip/Al-20 wt% Si composite prepared by hot-pressed sintering technology

AU - Liu, Jun

AU - Xiu, Ziyang

AU - Liang, Xue

AU - Li, Qiang

AU - Hussain, Murid

AU - Qiao, Jing

AU - Jiang, Longtao

PY - 2014/2

Y1 - 2014/2

N2 - In the present work, 50 vol% Sip/Al-20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al-20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al-20Si composite were 11.7 × 10-6/C and 118 W/(m K), respectively. Sip/Al-20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al-20Si composite very attractive for application in electron packaging.

AB - In the present work, 50 vol% Sip/Al-20Si composite was prepared by hot-pressed sintering technology. Si particles were uniformly distributed in the Sip/Al-20Si composite, and only the presence of Si and Al phases were detected by XRD analysis. Dislocations, twins, and stacking faults were found in the Si particles. Several Si phases were found to be precipitated between Al matrix and Si particles. Si/Al interface was clean, smooth, and free from interfacial product. HRTEM indicated that the Si/Al interface was well bonded. The average CTE and thermal conductivity (TC) of Sip/Al-20Si composite were 11.7 × 10-6/C and 118 W/(m K), respectively. Sip/Al-20Si composite also demonstrated high mechanical properties (bending strength of 386 MPa). Thus, the comprehensive performance (low density and CTE, high TC, and mechanical properties) makes the Sip/Al-20Si composite very attractive for application in electron packaging.

UR - https://www.scopus.com/pages/publications/84891346973

U2 - 10.1007/s10853-013-7821-8

DO - 10.1007/s10853-013-7821-8

M3 - 文章

AN - SCOPUS:84891346973

SN - 0022-2461

VL - 49

SP - 1368

EP - 1375

JO - Journal of Materials Science

JF - Journal of Materials Science

IS - 3

ER -

Microstructure and properties of Sip/Al-20 wt% Si composite prepared by hot-pressed sintering technology

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