Abstract
Gas sensors made of semiconductor heterojunctions have excellent gas-sensitive properties. However, sufficient theoretical evidence is still needed to prove that heterojunction improve gas sensitivity of a single-material. A typical case is studied here: MoS2/SnO2 heterojunction absorption of NO2 is investigated by first-principles calculations, to explore the enhancing-mechanism. Interestingly, it is found that electron transfer not only occurs between the material surface of the heterojunction and gas, but also involves the substrate atoms transferring electrons to the gas molecules through the surface atoms. This finding fills the response mechanism of heterojunction gas sensors and provides a theoretical basis for experiments.
| Original language | English |
|---|---|
| Article number | 141639 |
| Journal | Chemical Physics Letters |
| Volume | 856 |
| DOIs | |
| State | Published - Dec 2024 |
| Externally published | Yes |
Keywords
- DFT calculations
- Gas sensing
- Heterojunction
- Interface charge transfer
- NO detection
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