Abstract
Vapor cells as the key part of chip-scale atomic clocks determine their volume stability and power consumption. Micro-fabrication, especially the cavity packaging, is challenging. In this paper, micro-fabricated rubidium vapor cells are fabricated and the Au-In TLP bonding with asymmetric metal configuration is proposed and designed to package wafer-scale cell chips at a low processing temperature of 200 °C. Tests show that the designed intermetallic compounds AuIn2 and AuIn are uniformly formed in the asymmetric TLP bonding interlayer, indicating that the bonded interlayer can endure a post-processing temperature as high as 490 °C. The TLP bonded surface exhibits shear strength of 31.68 MPa, and the upper limit for the leak rate of the sealed vapor cell is 5 × 10-10 mbar • L s-1 which remains stable after undergoing a high temperature post-treatment. Meaning the proposed Au-In TLP bonding technique is applicable at low-temperature, hermetic and reliable wafer-scale packaging for micro-fabricated alkali vapor cells.
| Original language | English |
|---|---|
| Article number | SDDL03 |
| Journal | Japanese Journal of Applied Physics, Part 2: Letters |
| Volume | 58 |
| Issue number | SD |
| DOIs | |
| State | Published - 2019 |
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