Metal/SrTiO3/p-diamond dielectric heterojunction diode with a monumental enhancement in breakdown electric field

Bo Liang; Benjian Liu; Wenchao Zhang; Ziyi Chen; Wei Liang; Liangyu Liu; Chuanlong Li; Kang Liu; Sen Zhang; Bing Dai; V. G. Ralchenko; Jiaqi Zhu

doi:10.1016/j.diamond.2025.113044

Metal/SrTiO₃/p-diamond dielectric heterojunction diode with a monumental enhancement in breakdown electric field

Bo Liang
, Benjian Liu^*
, Wenchao Zhang
, Ziyi Chen
, Wei Liang
, Liangyu Liu
, Chuanlong Li
, Kang Liu
, Sen Zhang^*
, Bing Dai^*
, V. G. Ralchenko
, Jiaqi Zhu

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology
Russian Academy of Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The absence of effective n-type doping in diamond limits the achievable high breakdown electric field for diamond-based diodes. In this work, we propose dielectric heterojunction diodes utilizing extreme permittivity materials to achieve enhanced breakdown electric field. By choosing SrTiO₃as the dielectric layer, the breakdown electric field increased from 0.82 to 3.90 MV/cm. Band alignment elucidates the mechanism behind the performance enhancement, while dielectric analysis provides a pathway to further optimize the forward characteristics of diamond heterojunction diodes.

Original language	English
Article number	113044
Journal	Diamond and Related Materials
Volume	160
DOIs	https://doi.org/10.1016/j.diamond.2025.113044
State	Published - Dec 2025

Keywords

Band alignment
Diamond
Dielectric heterojunction diode
SrTiO

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10.1016/j.diamond.2025.113044

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title = "Metal/SrTiO3/p-diamond dielectric heterojunction diode with a monumental enhancement in breakdown electric field",

abstract = "The absence of effective n-type doping in diamond limits the achievable high breakdown electric field for diamond-based diodes. In this work, we propose dielectric heterojunction diodes utilizing extreme permittivity materials to achieve enhanced breakdown electric field. By choosing SrTiO3as the dielectric layer, the breakdown electric field increased from 0.82 to 3.90 MV/cm. Band alignment elucidates the mechanism behind the performance enhancement, while dielectric analysis provides a pathway to further optimize the forward characteristics of diamond heterojunction diodes.",

keywords = "Band alignment, Diamond, Dielectric heterojunction diode, SrTiO",

author = "Bo Liang and Benjian Liu and Wenchao Zhang and Ziyi Chen and Wei Liang and Liangyu Liu and Chuanlong Li and Kang Liu and Sen Zhang and Bing Dai and Ralchenko, \{V. G.\} and Jiaqi Zhu",

note = "Publisher Copyright: {\textcopyright} 2025 Elsevier B.V. All rights are reserved, including those for text and data mining, AI training, and similar technologies.",

year = "2025",

month = dec,

doi = "10.1016/j.diamond.2025.113044",

language = "英语",

volume = "160",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Metal/SrTiO3/p-diamond dielectric heterojunction diode with a monumental enhancement in breakdown electric field

AU - Liang, Bo

AU - Liu, Benjian

AU - Zhang, Wenchao

AU - Chen, Ziyi

AU - Liang, Wei

AU - Liu, Liangyu

AU - Li, Chuanlong

AU - Liu, Kang

AU - Zhang, Sen

AU - Dai, Bing

AU - Ralchenko, V. G.

AU - Zhu, Jiaqi

PY - 2025/12

Y1 - 2025/12

N2 - The absence of effective n-type doping in diamond limits the achievable high breakdown electric field for diamond-based diodes. In this work, we propose dielectric heterojunction diodes utilizing extreme permittivity materials to achieve enhanced breakdown electric field. By choosing SrTiO3as the dielectric layer, the breakdown electric field increased from 0.82 to 3.90 MV/cm. Band alignment elucidates the mechanism behind the performance enhancement, while dielectric analysis provides a pathway to further optimize the forward characteristics of diamond heterojunction diodes.

AB - The absence of effective n-type doping in diamond limits the achievable high breakdown electric field for diamond-based diodes. In this work, we propose dielectric heterojunction diodes utilizing extreme permittivity materials to achieve enhanced breakdown electric field. By choosing SrTiO3as the dielectric layer, the breakdown electric field increased from 0.82 to 3.90 MV/cm. Band alignment elucidates the mechanism behind the performance enhancement, while dielectric analysis provides a pathway to further optimize the forward characteristics of diamond heterojunction diodes.

KW - Band alignment

KW - Diamond

KW - Dielectric heterojunction diode

KW - SrTiO

UR - https://www.scopus.com/pages/publications/105024063003

U2 - 10.1016/j.diamond.2025.113044

DO - 10.1016/j.diamond.2025.113044

M3 - 文章

AN - SCOPUS:105024063003

SN - 0925-9635

VL - 160

JO - Diamond and Related Materials

JF - Diamond and Related Materials

M1 - 113044

ER -

Metal/SrTiO₃/p-diamond dielectric heterojunction diode with a monumental enhancement in breakdown electric field

Abstract

Keywords

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