TY - GEN
T1 - Mechanism of low temperature Cu-In Solid-Liquid Interdiffusion bonding in 3D package
AU - Tian, Yanhong
AU - Wang, Ning
AU - Li, Yang
AU - Wang, Chunqing
PY - 2012
Y1 - 2012
N2 - Three-dimensional (3D) integrated circuit (IC) packaging technology is under rapid development to realize high-density and high-speed transmission, and through silicon via (TSV) as advanced bonding technology is used to connect the wafers in chips extensively. Cu-In Solid-Liquid Interdiffusion (SOLID) low temperature bonding is a promising process for TSV interconnection. In this paper, the joint consisting of complete intermetallic compounds (IMCs) was designed as a potential alternative method to improve the reliability of solder joints in the electronic assemblies and systems operated at elevated temperatures. The samples of Si/Ti/Cu/In structure were used for the SOLID bonding. Scanning electron microscope (SEM) and Energy-dispersive X-ray (EDX) were used to observe the interfacial microstructure which showed the joints all consisted of the complete Cu-In IMCs. The appropriate bonding temperature and peak temperature were determined according to the result of observation. The results showed that at the temperature of 260°C, the Cu11In 9 and Cu2In phase will be firstly formed in the solder. The Cu2In and Cu7In3 phase will be firstly formed at the temperature of 360°C.
AB - Three-dimensional (3D) integrated circuit (IC) packaging technology is under rapid development to realize high-density and high-speed transmission, and through silicon via (TSV) as advanced bonding technology is used to connect the wafers in chips extensively. Cu-In Solid-Liquid Interdiffusion (SOLID) low temperature bonding is a promising process for TSV interconnection. In this paper, the joint consisting of complete intermetallic compounds (IMCs) was designed as a potential alternative method to improve the reliability of solder joints in the electronic assemblies and systems operated at elevated temperatures. The samples of Si/Ti/Cu/In structure were used for the SOLID bonding. Scanning electron microscope (SEM) and Energy-dispersive X-ray (EDX) were used to observe the interfacial microstructure which showed the joints all consisted of the complete Cu-In IMCs. The appropriate bonding temperature and peak temperature were determined according to the result of observation. The results showed that at the temperature of 260°C, the Cu11In 9 and Cu2In phase will be firstly formed in the solder. The Cu2In and Cu7In3 phase will be firstly formed at the temperature of 360°C.
UR - https://www.scopus.com/pages/publications/84875409863
U2 - 10.1109/ICEPT-HDP.2012.6474604
DO - 10.1109/ICEPT-HDP.2012.6474604
M3 - 会议稿件
AN - SCOPUS:84875409863
SN - 9781467316804
T3 - ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging
SP - 216
EP - 218
BT - ICEPT-HDP 2012 Proceedings - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging
T2 - 2012 13th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2012
Y2 - 13 August 2012 through 16 August 2012
ER -