Mechanism of different switching directions in graphene oxide based RRAM

Zhongrui Wang; V. Tjoa; L. Wu; W. J. Liu; Z. Fang; X. A. Tran; J. Wei; W. G. Zhu; H. Y. Yu

doi:10.1149/2.068206jes

Mechanism of different switching directions in graphene oxide based RRAM

Zhongrui Wang^*
, V. Tjoa
, L. Wu
, W. J. Liu
, Z. Fang
, X. A. Tran
, J. Wei
, W. G. Zhu
, H. Y. Yu

^*Corresponding author for this work

Nanyang Technological University
Agency for Science, Technology and Research, Singapore
Tianjin University of Technology
Southern University of Science and Technology

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.

Original language	English
Pages (from-to)	K177-K182
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	6
DOIs	https://doi.org/10.1149/2.068206jes
State	Published - 2012
Externally published	Yes

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SDG 7 Affordable and Clean Energy

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10.1149/2.068206jes

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title = "Mechanism of different switching directions in graphene oxide based RRAM",

abstract = "Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.",

author = "Zhongrui Wang and V. Tjoa and L. Wu and Liu, \{W. J.\} and Z. Fang and Tran, \{X. A.\} and J. Wei and Zhu, \{W. G.\} and Yu, \{H. Y.\}",

year = "2012",

doi = "10.1149/2.068206jes",

language = "英语",

volume = "159",

pages = "K177--K182",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Institute of Physics",

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TY - JOUR

T1 - Mechanism of different switching directions in graphene oxide based RRAM

AU - Wang, Zhongrui

AU - Tjoa, V.

AU - Wu, L.

AU - Liu, W. J.

AU - Fang, Z.

AU - Tran, X. A.

AU - Wei, J.

AU - Zhu, W. G.

AU - Yu, H. Y.

PY - 2012

Y1 - 2012

N2 - Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.

AB - Resistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO.

UR - https://www.scopus.com/pages/publications/84861401706

U2 - 10.1149/2.068206jes

DO - 10.1149/2.068206jes

M3 - 文章

AN - SCOPUS:84861401706

SN - 0013-4651

VL - 159

SP - K177-K182

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -

Mechanism of different switching directions in graphene oxide based RRAM

Abstract

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