Magnetron sputtered Ni -rich nickel oxide nano-films for resistive switching memory applications

Zhen Liu; Tu Pei Chen; Yang Liu; Sam Zhang

doi:10.1111/j.1744-7402.2012.02798.x

Magnetron sputtered Ni -rich nickel oxide nano-films for resistive switching memory applications

Zhen Liu^*
, Tu Pei Chen
, Yang Liu
, Sam Zhang

^*Corresponding author for this work

Nanyang Technological University
University of Electronic Science and Technology of China

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Radio-frequency magnetron sputtering has been used to deposit Ni-rich nickel oxide nano-films to form a metal-insulator-metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low-resistance state (LRS) and a high-resistance state (HRS) was observed to be >10³, showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 10⁴ s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.

Original language	English
Pages (from-to)	20-25
Number of pages	6
Journal	International Journal of Applied Ceramic Technology
Volume	10
Issue number	1
DOIs	https://doi.org/10.1111/j.1744-7402.2012.02798.x
State	Published - Jan 2013
Externally published	Yes

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title = "Magnetron sputtered Ni -rich nickel oxide nano-films for resistive switching memory applications",

abstract = "Radio-frequency magnetron sputtering has been used to deposit Ni-rich nickel oxide nano-films to form a metal-insulator-metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low-resistance state (LRS) and a high-resistance state (HRS) was observed to be >103, showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 104 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.",

author = "Zhen Liu and Chen, \{Tu Pei\} and Yang Liu and Sam Zhang",

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AU - Liu, Zhen

AU - Chen, Tu Pei

AU - Liu, Yang

AU - Zhang, Sam

PY - 2013/1

Y1 - 2013/1

N2 - Radio-frequency magnetron sputtering has been used to deposit Ni-rich nickel oxide nano-films to form a metal-insulator-metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low-resistance state (LRS) and a high-resistance state (HRS) was observed to be >103, showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 104 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.

AB - Radio-frequency magnetron sputtering has been used to deposit Ni-rich nickel oxide nano-films to form a metal-insulator-metal structure, which exhibits resistive switching behavior. Memory characteristics of the structure have been investigated. The ratio of the current of the structure at the reading voltage of 0.05 V between a low-resistance state (LRS) and a high-resistance state (HRS) was observed to be >103, showing a large memory window at a very low reading voltage. The memory window was well maintained within the time limit of the experiment (5 × 104 s), exhibiting good memory retention. The current transport at both the LRS and HRS has been studied, and the result suggests that the formation and annihilation of a conductive filament are responsible for the resistive switching.

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Magnetron sputtered Ni -rich nickel oxide nano-films for resistive switching memory applications

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