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Magnetoresistance of two-dimensional and three-dimensional electron gas in LaAlO3/SrTiO3 heterostructures: Influence of magnetic ordering, interface scattering, and dimensionality

  • X. Wang*
  • , W. M. Lü
  • , A. Annadi
  • , Z. Q. Liu
  • , K. Gopinadhan
  • , S. Dhar
  • , T. Venkatesan
  • , Ariando
  • *Corresponding author for this work
  • National University of Singapore

Research output: Contribution to journalArticlepeer-review

Abstract

Magnetoresistance (MR) anisotropy in LaAlO3/SrTiO3 interfaces is compared between samples prepared in high-oxygen partial-pressure (PO2) of 10-4 mbar exhibiting quasi-two-dimensional (quasi-2D) electron gas and low PO2 of 10-6 mbar exhibiting 3D conductivity. While the 3D interfaces show positive MR for all temperatures, the quasi-2D interfaces show negative MR below 30 K, suggesting the presence of magnetic centers in the quasi-2D system. Interestingly, a linear relation between MR and applied magnetic fields was observed in the 3D interfaces for an in-plane field, while in the quasi-2D interfaces for an out-of-plane field, demonstrating the dominant effect of the interface and substrate's vicinal step scattering, respectively. Furthermore, the MR with the out-of-plane field is always larger compared to the MR with in-plane field, suggesting lower dissipation of electrons from interface than defect scattering. Our study demonstrates that MR can be used to distinguish the dimensionality of the charge transport and various (defect, magnetic center, and interface boundary) scattering processes in this system.

Original languageEnglish
Article number075312
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number7
DOIs
StatePublished - 8 Aug 2011
Externally publishedYes

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