Luminescence properties of ZnO films annealed in growth ambient and oxygen

Jinzhong Wang; Guotong Du; Yuantao Zhang; Baijun Zhao; Xiaotian Yang; Dali Liu

doi:10.1016/j.jcrysgro.2003.11.059

Luminescence properties of ZnO films annealed in growth ambient and oxygen

Jinzhong Wang^*
, Guotong Du
, Yuantao Zhang
, Baijun Zhao
, Xiaotian Yang
, Dali Liu

^*Corresponding author for this work

Jilin University

Research output: Contribution to journal › Article › peer-review

67 Scopus citations

Abstract

ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Thermal annealing was performed under growth conditions and in oxygen atmosphere. The photoluminescence (PL) spectra of the as-grown, annealed under growth conditions and oxygen atmosphere ZnO films were studied. The intensity of the ultraviolet (UV) emission peak from exciton transitions in the sample annealed under growth conditions increased, while the intensity of the deep-level emission peak decreased. For the sample annealed in oxygen atmosphere, the peak related to deep level strongly increased. Through the analysis and calculation, we suggest that the deep-level luminescence centers are zinc vacancy (V_Zn) and antisite defect (O_Zn), and the centers in the film annealed in oxygen atmosphere increase.

Original language	English
Pages (from-to)	269-272
Number of pages	4
Journal	Journal of Crystal Growth
Volume	263
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2003.11.059
State	Published - 1 Mar 2004
Externally published	Yes

Keywords

A1. Deep-level emission
A1. UV emission
A3. Metalorganic chemical vapor deposition

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10.1016/j.jcrysgro.2003.11.059

Cite this

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title = "Luminescence properties of ZnO films annealed in growth ambient and oxygen",

abstract = "ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Thermal annealing was performed under growth conditions and in oxygen atmosphere. The photoluminescence (PL) spectra of the as-grown, annealed under growth conditions and oxygen atmosphere ZnO films were studied. The intensity of the ultraviolet (UV) emission peak from exciton transitions in the sample annealed under growth conditions increased, while the intensity of the deep-level emission peak decreased. For the sample annealed in oxygen atmosphere, the peak related to deep level strongly increased. Through the analysis and calculation, we suggest that the deep-level luminescence centers are zinc vacancy (VZn) and antisite defect (OZn), and the centers in the film annealed in oxygen atmosphere increase.",

keywords = "A1. Deep-level emission, A1. UV emission, A3. Metalorganic chemical vapor deposition",

author = "Jinzhong Wang and Guotong Du and Yuantao Zhang and Baijun Zhao and Xiaotian Yang and Dali Liu",

year = "2004",

month = mar,

day = "1",

doi = "10.1016/j.jcrysgro.2003.11.059",

language = "英语",

volume = "263",

pages = "269--272",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Luminescence properties of ZnO films annealed in growth ambient and oxygen

AU - Wang, Jinzhong

AU - Du, Guotong

AU - Zhang, Yuantao

AU - Zhao, Baijun

AU - Yang, Xiaotian

AU - Liu, Dali

PY - 2004/3/1

Y1 - 2004/3/1

N2 - ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Thermal annealing was performed under growth conditions and in oxygen atmosphere. The photoluminescence (PL) spectra of the as-grown, annealed under growth conditions and oxygen atmosphere ZnO films were studied. The intensity of the ultraviolet (UV) emission peak from exciton transitions in the sample annealed under growth conditions increased, while the intensity of the deep-level emission peak decreased. For the sample annealed in oxygen atmosphere, the peak related to deep level strongly increased. Through the analysis and calculation, we suggest that the deep-level luminescence centers are zinc vacancy (VZn) and antisite defect (OZn), and the centers in the film annealed in oxygen atmosphere increase.

AB - ZnO films were deposited on c-plane sapphire substrates by metal-organic chemical vapor deposition (MOCVD). Thermal annealing was performed under growth conditions and in oxygen atmosphere. The photoluminescence (PL) spectra of the as-grown, annealed under growth conditions and oxygen atmosphere ZnO films were studied. The intensity of the ultraviolet (UV) emission peak from exciton transitions in the sample annealed under growth conditions increased, while the intensity of the deep-level emission peak decreased. For the sample annealed in oxygen atmosphere, the peak related to deep level strongly increased. Through the analysis and calculation, we suggest that the deep-level luminescence centers are zinc vacancy (VZn) and antisite defect (OZn), and the centers in the film annealed in oxygen atmosphere increase.

KW - A1. Deep-level emission

KW - A1. UV emission

KW - A3. Metalorganic chemical vapor deposition

UR - https://www.scopus.com/pages/publications/1242286466

U2 - 10.1016/j.jcrysgro.2003.11.059

DO - 10.1016/j.jcrysgro.2003.11.059

M3 - 文章

AN - SCOPUS:1242286466

SN - 0022-0248

VL - 263

SP - 269

EP - 272

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Luminescence properties of ZnO films annealed in growth ambient and oxygen

Abstract

Keywords

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