Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer

J. Wei; S. S. Deng; C. M. Tan; C. K. Wong

Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer

J. Wei^*
, S. S. Deng
, C. M. Tan
, C. K. Wong

^*Corresponding author for this work

Agency for Science, Technology and Research, Singapore
Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating.

Original language	English
Title of host publication	Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004
Editors	K.C. Toh, Y.C. Mui, J. How, J.H.L. Pang
Pages	189-192
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	6th Electronics Packaging Technology Conference, EPTC 2004 - Singapore, Singapore Duration: 8 Dec 2005 → 10 Dec 2005

Publication series

Name	Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004

Conference

Conference	6th Electronics Packaging Technology Conference, EPTC 2004
Country/Territory	Singapore
City	Singapore
Period	8/12/05 → 10/12/05

Cite this

Wei, J., Deng, S. S., Tan, C. M., & Wong, C. K. (2004). Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer. In K. C. Toh, Y. C. Mui, J. How, & J. H. L. Pang (Eds.), Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004 (pp. 189-192). Article B3.4 (Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004).

@inproceedings{295c9ab6209740fdbe3eac0c57f4cedb,

title = "Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer",

abstract = "In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating.",

author = "J. Wei and Deng, \{S. S.\} and Tan, \{C. M.\} and Wong, \{C. K.\}",

year = "2004",

language = "英语",

isbn = "0780388216",

series = "Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004",

pages = "189--192",

editor = "K.C. Toh and Y.C. Mui and J. How and J.H.L. Pang",

booktitle = "Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004",

note = "6th Electronics Packaging Technology Conference, EPTC 2004 ; Conference date: 08-12-2005 Through 10-12-2005",

}

Wei, J, Deng, SS, Tan, CM & Wong, CK 2004, Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer. in KC Toh, YC Mui, J How & JHL Pang (eds), Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004., B3.4, Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004, pp. 189-192, 6th Electronics Packaging Technology Conference, EPTC 2004, Singapore, Singapore, 8/12/05.

Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer. / Wei, J.; Deng, S. S.; Tan, C. M. et al.
Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004. ed. / K.C. Toh; Y.C. Mui; J. How; J.H.L. Pang. 2004. p. 189-192 B3.4 (Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer

AU - Wei, J.

AU - Deng, S. S.

AU - Tan, C. M.

AU - Wong, C. K.

PY - 2004

Y1 - 2004

N2 - In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating.

AB - In this study, Si-to-Si bonding process between two 4-inch, p-type silicon wafers has been successfully achieved with the assistance of tetraethylorthosilicate (TEOS) sol-gel coating. Atomic force microscopy (AFM) is used to measure the roughness of the sol-gel coating, and the contact angle of water on the sol-gel coated wafer is measured using an optical contact angle system. Fourier transform infrared spectroscopy (FTIR) is performed to determine the chemical bonds and bonding groups in the coatings. The bond strength is measured using an Instron tensile testing machine. The bond strength of up to 35 MPa has been achieved. The bonding mechanism for the low temperature sol-gel intermediate layer wafer bonding is found to be related to the surface smoothness, porous intermediate layer and high density of OH groups with small amount of absorbed water on the sol-gel coating.

UR - https://www.scopus.com/pages/publications/28444456741

M3 - 会议稿件

AN - SCOPUS:28444456741

SN - 0780388216

SN - 9780780388215

T3 - Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004

SP - 189

EP - 192

BT - Proceedings of 6th Electronics Packaging Technology Conference, EPTC 2004

A2 - Toh, K.C.

A2 - Mui, Y.C.

A2 - How, J.

A2 - Pang, J.H.L.

T2 - 6th Electronics Packaging Technology Conference, EPTC 2004

Y2 - 8 December 2005 through 10 December 2005

ER -

Low temperature Si-to-Si wafer bonding with sol-gel coating as intermediate layer

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