Low temperature preparation and electric properties of highly (100)-oriented Pb0.8 La0.1Ca0.1Ti 0.975O3 thin films prepared by a sol-gel route

Q. G. Chi; W. L. Li; Y. Zhao; W. D. Fei

doi:10.1007/s10971-010-2192-y

Low temperature preparation and electric properties of highly (100)-oriented Pb_0.8 La_0.1Ca_0.1Ti _0.975O₃ thin films prepared by a sol-gel route

Q. G. Chi
, W. L. Li
, Y. Zhao
, W. D. Fei

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Highly (100)-oriented Pb_0.8La_0.1Ca _0.1Ti_0.975O₃ (PLCT) thin films deposited on Pt/Ti/SiO₂/Si substrate were successfully achieved by a sol-gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 °C. When the annealing temperature increased to 500 °C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 μC/cm²) and better pyroelectric figure of merit (F _d = 205 μC/m²k) at room temperature. It was also found too high annealing temperature (625 °C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.

Original language	English
Pages (from-to)	286-291
Number of pages	6
Journal	Journal of Sol-Gel Science and Technology
Volume	54
Issue number	3
DOIs	https://doi.org/10.1007/s10971-010-2192-y
State	Published - Jun 2010
Externally published	Yes

Keywords

Electric properties
Low-temperature growth
Orientation
PLCT thin films

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10.1007/s10971-010-2192-y

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@article{93b7578762564cc4bfba54164fef1914,

title = "Low temperature preparation and electric properties of highly (100)-oriented Pb0.8 La0.1Ca0.1Ti 0.975O3 thin films prepared by a sol-gel route",

abstract = "Highly (100)-oriented Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT) thin films deposited on Pt/Ti/SiO2/Si substrate were successfully achieved by a sol-gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 °C. When the annealing temperature increased to 500 °C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 μC/cm2) and better pyroelectric figure of merit (F d = 205 μC/m2k) at room temperature. It was also found too high annealing temperature (625 °C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.",

keywords = "Electric properties, Low-temperature growth, Orientation, PLCT thin films",

author = "Chi, \{Q. G.\} and Li, \{W. L.\} and Y. Zhao and Fei, \{W. D.\}",

year = "2010",

month = jun,

doi = "10.1007/s10971-010-2192-y",

language = "英语",

volume = "54",

pages = "286--291",

journal = "Journal of Sol-Gel Science and Technology",

issn = "0928-0707",

publisher = "Springer Netherlands",

number = "3",

}

TY - JOUR

T1 - Low temperature preparation and electric properties of highly (100)-oriented Pb0.8 La0.1Ca0.1Ti 0.975O3 thin films prepared by a sol-gel route

AU - Chi, Q. G.

AU - Li, W. L.

AU - Zhao, Y.

AU - Fei, W. D.

PY - 2010/6

Y1 - 2010/6

N2 - Highly (100)-oriented Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT) thin films deposited on Pt/Ti/SiO2/Si substrate were successfully achieved by a sol-gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 °C. When the annealing temperature increased to 500 °C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 μC/cm2) and better pyroelectric figure of merit (F d = 205 μC/m2k) at room temperature. It was also found too high annealing temperature (625 °C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.

AB - Highly (100)-oriented Pb0.8La0.1Ca 0.1Ti0.975O3 (PLCT) thin films deposited on Pt/Ti/SiO2/Si substrate were successfully achieved by a sol-gel route. The influence of annealing temperature on microstructures and electric properties was investigated; it was found that the PLCT film could be crystallized only at 450 °C. When the annealing temperature increased to 500 °C, the PLCT film exhibited highly (100)-oriented, which also possessed higher remnant polarization Pr (27 μC/cm2) and better pyroelectric figure of merit (F d = 205 μC/m2k) at room temperature. It was also found too high annealing temperature (625 °C) could lead to recrystallization of film, and the small grains caused by recrystallization could make polarization reversal difficult and disturbed the preferred crystal growth in film, which was not benefit to obtain enhanced electric properties.

KW - Electric properties

KW - Low-temperature growth

KW - Orientation

KW - PLCT thin films

UR - https://www.scopus.com/pages/publications/77953798564

U2 - 10.1007/s10971-010-2192-y

DO - 10.1007/s10971-010-2192-y

M3 - 文章

AN - SCOPUS:77953798564

SN - 0928-0707

VL - 54

SP - 286

EP - 291

JO - Journal of Sol-Gel Science and Technology

JF - Journal of Sol-Gel Science and Technology

IS - 3

ER -

Low temperature preparation and electric properties of highly (100)-oriented Pb_0.8 La_0.1Ca_0.1Ti _0.975O₃ thin films prepared by a sol-gel route

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Keywords

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