@inproceedings{afd90739c8b24446a41b27b7da6ad396,
title = "Low-temperature direct and indirect bonding using plasma activation for 3D integration",
abstract = "In this study, plasma activation is demonstrated as a surface activation method in SiCOI (SiC-on-insulator) substrate fabrication, silicon-based wafer bonding, and pressure-less Ag nanopaste sintering for 3D integration. Oxygen inductive coupled plasma (ICP) shows high efficiency in organic removal and surface activation, which not only achieves a tight and reliable direct bonding but also serves for pressure-less sintering of Ag nanopaste by pre-decomposing the organic components. The oxygen plasma activation has exerted its multi-functional nature and excellent performance in both direct and indirect bonding methods. We believe that the plasma activation has sufficient potential as a versatile and efficient approach for heterogeneous integration and high-density packaging.",
keywords = "3D integration, Plasma activation, SiCOI fabrication, nanopaste, pressure-less sintering, wafer bonding",
author = "Shicheng Zhou and Xiaoyun Qi and Qiushi Kang and Chenxi Wang",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 3rd IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020 ; Conference date: 23-11-2020 Through 25-11-2020",
year = "2020",
month = nov,
day = "23",
doi = "10.1109/ICTA50426.2020.9331985",
language = "英语",
series = "Proceedings of 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "130--132",
booktitle = "Proceedings of 2020 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2020",
address = "美国",
}