Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer

Q. G. Chi; W. L. Li; B. Feng; C. Q. Liu; W. D. Fei

doi:10.1016/j.scriptamat.2008.10.003

Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O₃ thin films using a Pb_0.8Ca_0.1La_0.1Ti_0.975O₃ seed layer

Q. G. Chi
, W. L. Li
, B. Feng
, C. Q. Liu
, W. D. Fei^*

^*Corresponding author for this work

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Low-temperature growth of Pb(Nb_0.01Zr_0.2Ti_0.8)O₃ (PNZT) films, as low as 450 °C, was successfully achieved by a sol-gel route using a Pb_0.8Ca_0.1La_0.1Ti_0.975O₃ (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M.

Original language	English
Pages (from-to)	218-220
Number of pages	3
Journal	Scripta Materialia
Volume	60
Issue number	4
DOIs	https://doi.org/10.1016/j.scriptamat.2008.10.003
State	Published - Feb 2009
Externally published	Yes

Keywords

Ferroelectricity
Low-temperature crystallization
Texture

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10.1016/j.scriptamat.2008.10.003

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@article{d945ccbcd6cb4d47996b257499be340a,

title = "Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer",

abstract = "Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) films, as low as 450 °C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M.",

keywords = "Ferroelectricity, Low-temperature crystallization, Texture",

author = "Chi, \{Q. G.\} and Li, \{W. L.\} and B. Feng and Liu, \{C. Q.\} and Fei, \{W. D.\}",

year = "2009",

month = feb,

doi = "10.1016/j.scriptamat.2008.10.003",

language = "英语",

volume = "60",

pages = "218--220",

journal = "Scripta Materialia",

issn = "1359-6462",

publisher = "Acta Materialia Inc",

number = "4",

}

TY - JOUR

T1 - Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O3 thin films using a Pb0.8Ca0.1La0.1Ti0.975O3 seed layer

AU - Chi, Q. G.

AU - Li, W. L.

AU - Feng, B.

AU - Liu, C. Q.

AU - Fei, W. D.

PY - 2009/2

Y1 - 2009/2

N2 - Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) films, as low as 450 °C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M.

AB - Low-temperature growth of Pb(Nb0.01Zr0.2Ti0.8)O3 (PNZT) films, as low as 450 °C, was successfully achieved by a sol-gel route using a Pb0.8Ca0.1La0.1Ti0.975O3 (PLCT) seed layer. The influence of precursor concentration of the PLCT seed layer on the orientation and ferroelectric properties of PNZT films was investigated. With increasing concentration of the PLCT seed layer, the PNZT films clearly changed from (1 1 1)-oriented to (1 0 0)-oriented. The PNZT films showed a very square ferroelectric hysteresis loop when the concentration of the PLCT seed layer is 0.05 M.

KW - Ferroelectricity

KW - Low-temperature crystallization

KW - Texture

UR - https://www.scopus.com/pages/publications/56249147534

U2 - 10.1016/j.scriptamat.2008.10.003

DO - 10.1016/j.scriptamat.2008.10.003

M3 - 文章

AN - SCOPUS:56249147534

SN - 1359-6462

VL - 60

SP - 218

EP - 220

JO - Scripta Materialia

JF - Scripta Materialia

IS - 4

ER -

Low-temperature crystallization and orientation evolution of Nb-doped Pb(Zr,Ti)O₃ thin films using a Pb_0.8Ca_0.1La_0.1Ti_0.975O₃ seed layer

Abstract

Keywords

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