Low temperature bonding mechanism of porous Si3N4 ceramics by Sn9Zn solder in ultrasonic-assisted soldering

Han Yan; Zhengwei Li; Zhiwu Xu; Boxu Ren

doi:10.1016/j.matchar.2022.111753

Low temperature bonding mechanism of porous Si₃N₄ ceramics by Sn9Zn solder in ultrasonic-assisted soldering

Han Yan
, Zhengwei Li^*
, Zhiwu Xu
, Boxu Ren

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Porous Si₃N₄ ceramics are widely used materials but very difficult to join. In this work, we successfully ultrasonically soldered porous Si₃N₄ ceramic rapidly at a low temperature of 230 °C. The wetting and bonding mechanism at the ceramic/solder interface was studied. Results showed that the solder rapidly infiltrated the micro-channels of the ceramic during soldering, and high ultrasonic power contributed the sonocapillary distance. Zn and O acted as the main bonding elements. Bonding was realized by the formation of nanocrystalline and amorphous ZnO_x region at the wetting interface. Rapid bonding was achieved due to the high liquid velocity, high temperature, and high pressure caused by the collapse of the cavitation bubbles.

Original language	English
Article number	111753
Journal	Materials Characterization
Volume	185
DOIs	https://doi.org/10.1016/j.matchar.2022.111753
State	Published - Mar 2022

Keywords

Bonding
Cavitation
Nanocrystalline
Porous ceramic
Ultrasonic-assisted soldering

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10.1016/j.matchar.2022.111753

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title = "Low temperature bonding mechanism of porous Si3N4 ceramics by Sn9Zn solder in ultrasonic-assisted soldering",

abstract = "Porous Si3N4 ceramics are widely used materials but very difficult to join. In this work, we successfully ultrasonically soldered porous Si3N4 ceramic rapidly at a low temperature of 230 °C. The wetting and bonding mechanism at the ceramic/solder interface was studied. Results showed that the solder rapidly infiltrated the micro-channels of the ceramic during soldering, and high ultrasonic power contributed the sonocapillary distance. Zn and O acted as the main bonding elements. Bonding was realized by the formation of nanocrystalline and amorphous ZnOx region at the wetting interface. Rapid bonding was achieved due to the high liquid velocity, high temperature, and high pressure caused by the collapse of the cavitation bubbles.",

keywords = "Bonding, Cavitation, Nanocrystalline, Porous ceramic, Ultrasonic-assisted soldering",

author = "Han Yan and Zhengwei Li and Zhiwu Xu and Boxu Ren",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Inc.",

year = "2022",

month = mar,

doi = "10.1016/j.matchar.2022.111753",

language = "英语",

volume = "185",

journal = "Materials Characterization",

issn = "1044-5803",

publisher = "Elsevier Inc.",

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TY - JOUR

T1 - Low temperature bonding mechanism of porous Si3N4 ceramics by Sn9Zn solder in ultrasonic-assisted soldering

AU - Yan, Han

AU - Li, Zhengwei

AU - Xu, Zhiwu

AU - Ren, Boxu

PY - 2022/3

Y1 - 2022/3

N2 - Porous Si3N4 ceramics are widely used materials but very difficult to join. In this work, we successfully ultrasonically soldered porous Si3N4 ceramic rapidly at a low temperature of 230 °C. The wetting and bonding mechanism at the ceramic/solder interface was studied. Results showed that the solder rapidly infiltrated the micro-channels of the ceramic during soldering, and high ultrasonic power contributed the sonocapillary distance. Zn and O acted as the main bonding elements. Bonding was realized by the formation of nanocrystalline and amorphous ZnOx region at the wetting interface. Rapid bonding was achieved due to the high liquid velocity, high temperature, and high pressure caused by the collapse of the cavitation bubbles.

AB - Porous Si3N4 ceramics are widely used materials but very difficult to join. In this work, we successfully ultrasonically soldered porous Si3N4 ceramic rapidly at a low temperature of 230 °C. The wetting and bonding mechanism at the ceramic/solder interface was studied. Results showed that the solder rapidly infiltrated the micro-channels of the ceramic during soldering, and high ultrasonic power contributed the sonocapillary distance. Zn and O acted as the main bonding elements. Bonding was realized by the formation of nanocrystalline and amorphous ZnOx region at the wetting interface. Rapid bonding was achieved due to the high liquid velocity, high temperature, and high pressure caused by the collapse of the cavitation bubbles.

KW - Bonding

KW - Cavitation

KW - Nanocrystalline

KW - Porous ceramic

KW - Ultrasonic-assisted soldering

UR - https://www.scopus.com/pages/publications/85123257350

U2 - 10.1016/j.matchar.2022.111753

DO - 10.1016/j.matchar.2022.111753

M3 - 文章

AN - SCOPUS:85123257350

SN - 1044-5803

VL - 185

JO - Materials Characterization

JF - Materials Characterization

M1 - 111753

ER -

Low temperature bonding mechanism of porous Si₃N₄ ceramics by Sn9Zn solder in ultrasonic-assisted soldering

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Keywords

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