TY - GEN
T1 - Low-temperature bonding and interfacial failure behavior of Si/glass and glass/glass chips
AU - Kang, Qiushi
AU - Wang, Chenxi
AU - Zhou, Shicheng
AU - Lu, Tian
AU - Tian, Yanhong
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/8
Y1 - 2020/8
N2 - Silicon and glass, as the two most common substrates in the semiconductor field, can be integrated into optoelectronic devices, micro/nanofluidic chips and even extended to biological applications. To obtain diverse and reliable micro/nano electromechanical systems, the integrated interface needs to ensure good mechanical properties and corrosion resistance in chemical and biological environments. Here, we propose an inductively coupled plasma with horizontal activation direction which suppresses the formation of damage position on the surface of Si and glass chips, and void-free Si/glass and glass/glass interfaces were achieved at 150 °C. Moreover, immersion tests with different working solutions were designed to investigate the interfacial corrosion resistance. By measuring the adhesive strength and observing the interface, it is found that the strength decreased rapidly after immersing the samples in ethanol for 24 h compared with other solutions. Based on the failure behavior and conventional water corrosion mechanism, the corrosion mechanisms were improved. The results are not only beneficial for the reliability evaluation of devices, but also provide the possibility of de-bonding or even recycling the substrates in the future.
AB - Silicon and glass, as the two most common substrates in the semiconductor field, can be integrated into optoelectronic devices, micro/nanofluidic chips and even extended to biological applications. To obtain diverse and reliable micro/nano electromechanical systems, the integrated interface needs to ensure good mechanical properties and corrosion resistance in chemical and biological environments. Here, we propose an inductively coupled plasma with horizontal activation direction which suppresses the formation of damage position on the surface of Si and glass chips, and void-free Si/glass and glass/glass interfaces were achieved at 150 °C. Moreover, immersion tests with different working solutions were designed to investigate the interfacial corrosion resistance. By measuring the adhesive strength and observing the interface, it is found that the strength decreased rapidly after immersing the samples in ethanol for 24 h compared with other solutions. Based on the failure behavior and conventional water corrosion mechanism, the corrosion mechanisms were improved. The results are not only beneficial for the reliability evaluation of devices, but also provide the possibility of de-bonding or even recycling the substrates in the future.
KW - corrosion resistance
KW - de-bonding
KW - failure behavior
KW - low-temperature bonding
UR - https://www.scopus.com/pages/publications/85093366128
U2 - 10.1109/ICEPT50128.2020.9202445
DO - 10.1109/ICEPT50128.2020.9202445
M3 - 会议稿件
AN - SCOPUS:85093366128
T3 - 2020 21st International Conference on Electronic Packaging Technology, ICEPT 2020
BT - 2020 21st International Conference on Electronic Packaging Technology, ICEPT 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 21st International Conference on Electronic Packaging Technology, ICEPT 2020
Y2 - 12 August 2020 through 15 August 2020
ER -