TY - GEN
T1 - Low redundancy matrix-based codes for adjacent error correction with parity sharing
AU - Liu, Shanshan
AU - Xiao, Liyi
AU - Li, Jie
AU - Zhou, Yihan
AU - Mao, Zhigang
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/5/2
Y1 - 2017/5/2
N2 - As CMOS technology scales down, multiple cell upsets (MCUs) caused by a single radiation particle have become one of the most challenging reliability issues for memories in space applications. In general, bits affected by MCUs are usually physically close. Error correction codes (ECCs) are commonly used to protect memory against MCUs. Recently, Matrix-based codes are an interesting option due to their low complexity decoding. The number of parity bits matrix-based codes required, which is related to the redundancy cells in memories, is not small. In this paper, a low redundancy scheme for matrix-based codes is presented. Based on a new matrix arrangement, the proposed scheme combines the extended Hamming codes per row and parity codes per column with parity sharing. Compared to the existing matrix-based codes, the proposed scheme maintains the same correction capability, but costs a smaller number of parity bits by 24% at most, a smaller area overhead by 16.24%, and a lower power overhead by 26.04%, which make the new scheme attractive for circuit implementations. Meanwhile, the MCUs probability of memories protected by the proposed scheme can be reduced owning to less redundancy memory cells. However, the delay required for the encoder and decoder of the proposed codes are in a middle level among the existing matrix-based codes, which results in that the proposed codes suit better for memories with a strict requirement of area and power.
AB - As CMOS technology scales down, multiple cell upsets (MCUs) caused by a single radiation particle have become one of the most challenging reliability issues for memories in space applications. In general, bits affected by MCUs are usually physically close. Error correction codes (ECCs) are commonly used to protect memory against MCUs. Recently, Matrix-based codes are an interesting option due to their low complexity decoding. The number of parity bits matrix-based codes required, which is related to the redundancy cells in memories, is not small. In this paper, a low redundancy scheme for matrix-based codes is presented. Based on a new matrix arrangement, the proposed scheme combines the extended Hamming codes per row and parity codes per column with parity sharing. Compared to the existing matrix-based codes, the proposed scheme maintains the same correction capability, but costs a smaller number of parity bits by 24% at most, a smaller area overhead by 16.24%, and a lower power overhead by 26.04%, which make the new scheme attractive for circuit implementations. Meanwhile, the MCUs probability of memories protected by the proposed scheme can be reduced owning to less redundancy memory cells. However, the delay required for the encoder and decoder of the proposed codes are in a middle level among the existing matrix-based codes, which results in that the proposed codes suit better for memories with a strict requirement of area and power.
KW - SRAM memory
KW - error correction codes
KW - matrix-based codes
KW - multiple Cell Upsets (MCUs)
UR - https://www.scopus.com/pages/publications/85019647384
U2 - 10.1109/ISQED.2017.7918296
DO - 10.1109/ISQED.2017.7918296
M3 - 会议稿件
AN - SCOPUS:85019647384
T3 - Proceedings - International Symposium on Quality Electronic Design, ISQED
SP - 76
EP - 80
BT - Proceedings of the 18th International Symposium on Quality Electronic Design, ISQED 2017
PB - IEEE Computer Society
T2 - 18th International Symposium on Quality Electronic Design, ISQED 2017
Y2 - 14 March 2017 through 15 March 2017
ER -