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Low-angle boundaries in ZnGeP2 single crystals

  • School of Chemistry and Chemical Engineering, Harbin Institute of Technology
  • Yaroslav-the-Wise Novgorod State University
  • Institute of Monitoring of Climatic and Ecological Systems Siberian Branch of the Russian Academy of Sciences

Research output: Contribution to journalArticlepeer-review

Abstract

The structure of low-angle boundaries in ZnGeP2 crystals grown by the vertical Bridgman technique was studied using Borrmann X-ray topography. The slip systems of the dislocations in the boundaries were identified by studying the contrast rosettes generated by the Borrmann effect, in the region near the dislocation core. It was shown that the boundaries are of two types: type I consists of edge dislocations of the {10}⟨110⟩ slip system, and type II of edge and mixed dislocations of the {010}⟨100⟩ slip system. The boundaries of both types, consisting of pure edge dislocations with lines along [001], are symmetrical tilt boundaries with [001] rotation axes. The misorientations generated by the boundaries were estimated to range between 2–20 and 1–40′′, respectively. Low-angle boundaries are thought to be formed by polygonization of dislocations, caused by thermoelastic stresses.

Original languageEnglish
Pages (from-to)361-367
Number of pages7
JournalJournal of Applied Crystallography
Volume51
Issue number2
DOIs
StatePublished - Apr 2018
Externally publishedYes

Keywords

  • Borrmann effect
  • X-ray topography
  • ZnGeP single crystals
  • contrast rosettes
  • diffraction image simulation
  • dislocations
  • low-angle boundaries

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