Light-Assisted MACE Method for the Control of Silicon Nanowire Morphology

As a kind of one-dimensional nanostructure, silicon nanowires have a very wide range of applications in photovoltaic devices, electrical devices, and biosensors. The morphology control of nanowire arrays greatly affects the performance of nanowire arrays. In this paper, we introduce the light-assisted MACE method to prepare nanowire arrays. Through a large number of experiments, the effects of different light intensities and light wavelengths on the morphology of the formed silicon nanowire arrays are analyzed. At the same time, the degree of aggregation of nanowires is taken as the characterization parameter of the morphological characteristics, the change rule of clustering density and the change rule of the etching rate under different illumination power and wavelength conditions are qualitatively analyzed. Finally, we make a preliminary exploration and analysis of the reasons for this appearance.