Lifetime model for advanced N-Channel transistor hot-carrier-injection degradation

Mingzhi Dai

doi:10.1109/LED.2010.2046392

Lifetime model for advanced N-Channel transistor hot-carrier-injection degradation

Mingzhi Dai^*

^*Corresponding author for this work

Yale University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A hot-carrier-injection (HCI) lifetime model of high-voltage (HV) N-channel transistors based on physical and mathematical basis is proposed. HV N-channel transistors show two peak values in the substrate-currentgate-voltage curve due to two high-electric-field regions (THFRs). The THFRs of HV transistors are found to be responsible for two coexistent HCI degradation mechanismsinterface trap generation and hole injection. The HCI lifetime model is modified based on the combined degradation mechanisms and updated substrate current model in HV N-channel transistors.

Original language	English
Article number	5454343
Pages (from-to)	525-527
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2046392
State	Published - Jun 2010
Externally published	Yes

Keywords

Semiconductor device measurement
Semiconductor device modeling
Semiconductor device reliability

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10.1109/LED.2010.2046392

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abstract = "A hot-carrier-injection (HCI) lifetime model of high-voltage (HV) N-channel transistors based on physical and mathematical basis is proposed. HV N-channel transistors show two peak values in the substrate-currentgate-voltage curve due to two high-electric-field regions (THFRs). The THFRs of HV transistors are found to be responsible for two coexistent HCI degradation mechanismsinterface trap generation and hole injection. The HCI lifetime model is modified based on the combined degradation mechanisms and updated substrate current model in HV N-channel transistors.",

keywords = "Semiconductor device measurement, Semiconductor device modeling, Semiconductor device reliability",

author = "Mingzhi Dai",

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AB - A hot-carrier-injection (HCI) lifetime model of high-voltage (HV) N-channel transistors based on physical and mathematical basis is proposed. HV N-channel transistors show two peak values in the substrate-currentgate-voltage curve due to two high-electric-field regions (THFRs). The THFRs of HV transistors are found to be responsible for two coexistent HCI degradation mechanismsinterface trap generation and hole injection. The HCI lifetime model is modified based on the combined degradation mechanisms and updated substrate current model in HV N-channel transistors.

KW - Semiconductor device measurement

KW - Semiconductor device modeling

KW - Semiconductor device reliability

UR - https://www.scopus.com/pages/publications/77953025206

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DO - 10.1109/LED.2010.2046392

M3 - 文章

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ER -

Lifetime model for advanced N-Channel transistor hot-carrier-injection degradation

Abstract

Keywords

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