Lewis based-Cs₄PbBr₆/EP with excellent radiation shielding properties achieved by the trade-off between electron density and electron binding energy

Ionizing radiation in space causes various damage to electronic devices in spacecraft and thus affects the normal conduct of space exploration missions. Therefore, it is urgent to develop radiation shielding materials with excellent radiation shielding properties to improve the anti-radiation ability of electronic devices. In this work, Lewis base-modified perovskite as a functional filler was prepared using the ligand-assisted reprecipitation method, and the influence of electron transferring induced by the modification with Lewis bases on the radiation shielding properties of materials was investigated. For the TAA-Cs₄PbBr₆/EP composite material, the XPS results show that the binding energy of the Pb 4f_5/2 orbital electrons after TAA modification decreases from 143.1 eV to 142.8 eV. The theoretical calculation results show that the valence electron density of Pb modified by TAA has increased by 0.0167. Under the trade-off of the two effects of reduced electron binding energy and increased electron density, the radiation shielding efficiency of the material increased from 43.2 % to 46.4 %. The radiation resistance of the encapsulated MOSFET was investigated. TAA-MOS shows a lower threshold voltage offset of 1.55 V than that of the CPB-MOS (2.29 V) and Bare-MOS (3.36 V), indicating that the radiation shielding properties of TAA-Cs₄PbBr₆/EP have been significantly improved after modification. This study provides a new strategy for developing high-efficiency radiation shielding materials.