Laser-Induced Damage Threshold of Single Crystal ZnGeP2 at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates

Nikolai Yudin; Oleg Antipov; Ilya Eranov; Alexander Gribenyukov; Galina Verozubova; Zuotao Lei; Mikhail Zinoviev; Sergey Podzvalov; Elena Slyunko; Vladimir Voevodin; Alexander Zav’jalov; Chunhui Yang

doi:10.3390/cryst12050652

Laser-Induced Damage Threshold of Single Crystal ZnGeP₂ at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates

Nikolai Yudin^*
, Oleg Antipov
, Ilya Eranov
, Alexander Gribenyukov
, Galina Verozubova
, Zuotao Lei
, Mikhail Zinoviev
, Sergey Podzvalov
, Elena Slyunko
, Vladimir Voevodin
, Alexander Zav’jalov
, Chunhui Yang

^*Corresponding author for this work

Tomsk State University
V.E. Zuev Institute of atmospheric optics SB RAS
Institute of Applied Physics of the Russian Academy of Sciences
Lobachevsky State University of Nizhni Novgorod
Institute of Monitoring of Climatic and Ecological Systems Siberian Branch of the Russian Academy of Sciences
School of Chemistry and Chemical Engineering, Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

The ZnGeP₂ crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP₂ nonlinear crystals induced by a repetitively-pulsed Ho³⁺:YAG laser at 2091 nm. Two types of ZnGeP₂ crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crystal structure factor for a higher LIDT was found to be a reduced dislocation density of crystal lattice. The ZnGeP₂ nonlinear crystals characterized by the high structural perfection with low density of dislocations and free from twinning and stacking faults were measured to have a 3.5 J/cm² pulse fluence damage threshold and 10.5 MW/cm² peak intensity damage threshold at 12 kHz PRR; at 40 kHz PRR the pulse fluence damage threshold increased to over 6 J/cm², but the peak intensity damage threshold dropped to 5.5 MW/cm².

Original language	English
Article number	652
Journal	Crystals
Volume	12
Issue number	5
DOIs	https://doi.org/10.3390/cryst12050652
State	Published - May 2022
Externally published	Yes

Keywords

ZnGeP
crystal structure
laser-induced damage threshold
single crystal

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10.3390/cryst12050652

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Yudin, N., Antipov, O., Eranov, I., Gribenyukov, A., Verozubova, G., Lei, Z., Zinoviev, M., Podzvalov, S., Slyunko, E., Voevodin, V., Zav’jalov, A., & Yang, C. (2022). Laser-Induced Damage Threshold of Single Crystal ZnGeP₂ at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates. Crystals, 12(5), Article 652. https://doi.org/10.3390/cryst12050652

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title = "Laser-Induced Damage Threshold of Single Crystal ZnGeP2 at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates",

abstract = "The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP2 nonlinear crystals induced by a repetitively-pulsed Ho3+:YAG laser at 2091 nm. Two types of ZnGeP2 crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crystal structure factor for a higher LIDT was found to be a reduced dislocation density of crystal lattice. The ZnGeP2 nonlinear crystals characterized by the high structural perfection with low density of dislocations and free from twinning and stacking faults were measured to have a 3.5 J/cm2 pulse fluence damage threshold and 10.5 MW/cm2 peak intensity damage threshold at 12 kHz PRR; at 40 kHz PRR the pulse fluence damage threshold increased to over 6 J/cm2, but the peak intensity damage threshold dropped to 5.5 MW/cm2.",

keywords = "ZnGeP, crystal structure, laser-induced damage threshold, single crystal",

author = "Nikolai Yudin and Oleg Antipov and Ilya Eranov and Alexander Gribenyukov and Galina Verozubova and Zuotao Lei and Mikhail Zinoviev and Sergey Podzvalov and Elena Slyunko and Vladimir Voevodin and Alexander Zav{\textquoteright}jalov and Chunhui Yang",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = may,

doi = "10.3390/cryst12050652",

language = "英语",

volume = "12",

journal = "Crystals",

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Yudin, N, Antipov, O, Eranov, I, Gribenyukov, A, Verozubova, G, Lei, Z, Zinoviev, M, Podzvalov, S, Slyunko, E, Voevodin, V, Zav’jalov, A & Yang, C 2022, 'Laser-Induced Damage Threshold of Single Crystal ZnGeP₂ at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates', Crystals, vol. 12, no. 5, 652. https://doi.org/10.3390/cryst12050652

TY - JOUR

T1 - Laser-Induced Damage Threshold of Single Crystal ZnGeP2 at 2.1 µm

T2 - The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates

AU - Yudin, Nikolai

AU - Antipov, Oleg

AU - Eranov, Ilya

AU - Gribenyukov, Alexander

AU - Verozubova, Galina

AU - Lei, Zuotao

AU - Zinoviev, Mikhail

AU - Podzvalov, Sergey

AU - Slyunko, Elena

AU - Voevodin, Vladimir

AU - Zav’jalov, Alexander

AU - Yang, Chunhui

PY - 2022/5

Y1 - 2022/5

N2 - The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP2 nonlinear crystals induced by a repetitively-pulsed Ho3+:YAG laser at 2091 nm. Two types of ZnGeP2 crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crystal structure factor for a higher LIDT was found to be a reduced dislocation density of crystal lattice. The ZnGeP2 nonlinear crystals characterized by the high structural perfection with low density of dislocations and free from twinning and stacking faults were measured to have a 3.5 J/cm2 pulse fluence damage threshold and 10.5 MW/cm2 peak intensity damage threshold at 12 kHz PRR; at 40 kHz PRR the pulse fluence damage threshold increased to over 6 J/cm2, but the peak intensity damage threshold dropped to 5.5 MW/cm2.

AB - The ZnGeP2 crystal is a material of choice for powerful mid-IR optical parametric oscillators and amplifiers. In this paper, we present the experimental analysis of the optical damage threshold of ZnGeP2 nonlinear crystals induced by a repetitively-pulsed Ho3+:YAG laser at 2091 nm. Two types of ZnGeP2 crystals grown under different conditions were examined using the laser and holographic techniques. The laser-induced damage threshold (LIDT) determined by the pulse fluence or peak intensity was studied as a function of the pulse repetition rate (PRR) and laser exposure duration. The main crystal structure factor for a higher LIDT was found to be a reduced dislocation density of crystal lattice. The ZnGeP2 nonlinear crystals characterized by the high structural perfection with low density of dislocations and free from twinning and stacking faults were measured to have a 3.5 J/cm2 pulse fluence damage threshold and 10.5 MW/cm2 peak intensity damage threshold at 12 kHz PRR; at 40 kHz PRR the pulse fluence damage threshold increased to over 6 J/cm2, but the peak intensity damage threshold dropped to 5.5 MW/cm2.

KW - ZnGeP

KW - crystal structure

KW - laser-induced damage threshold

KW - single crystal

UR - https://www.scopus.com/pages/publications/85130044880

U2 - 10.3390/cryst12050652

DO - 10.3390/cryst12050652

M3 - 文章

AN - SCOPUS:85130044880

SN - 2073-4352

VL - 12

JO - Crystals

JF - Crystals

IS - 5

M1 - 652

ER -

Laser-Induced Damage Threshold of Single Crystal ZnGeP₂ at 2.1 µm: The Effect of Crystal Lattice Quality at Various Pulse Widths and Repetition Rates

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