Large piezoelectric response of BiFeO3/BaTiO3 polycrystalline films induced by the low-symmetry phase

Y. F. Hou; W. L. Li; T. D. Zhang; W. Wang; W. P. Cao; X. L. Liu; W. D. Fei

doi:10.1039/c5cp01320h

Large piezoelectric response of BiFeO₃/BaTiO₃ polycrystalline films induced by the low-symmetry phase

Y. F. Hou
, W. L. Li
, T. D. Zhang
, W. Wang
, W. P. Cao
, X. L. Liu
, W. D. Fei^*

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology
Harbin Institute of Technology Shenzhen

Research output: Contribution to journal › Article › peer-review

36 Scopus citations

Abstract

BaTiO₃, BiFeO₃ and BiFeO₃/BaTiO₃ polycrystalline films were prepared by the radio frequency magnetron sputtering on the Pt/Ti/SiO₂/Si substrate. The phase structure, converse piezoelectric coefficient and domain structure of BaTiO₃, BiFeO₃ and BiFeO₃/BaTiO₃ thin films are characterized by XRD and PFM, respectively. The converse piezoelectric coefficient d₃₃ of BiFeO₃/BaTiO₃ thin films is 119.5 pm V^-1, which is comparable to that of lead-based piezoelectric films. The large piezoelectric response of BiFeO₃/BaTiO₃ thin films is ascribed to the low-symmetry T-like phase BiFeO₃, because the spontaneous polarization vector of T-like phase (with monoclinic symmetry) BiFeO₃ can rotate easily under external field. In addition, the reduced leakage current and major domains with upward polarization are also attributed to the large piezoelectricity.

Original language	English
Pages (from-to)	11593-11597
Number of pages	5
Journal	Physical Chemistry Chemical Physics
Volume	17
Issue number	17
DOIs	https://doi.org/10.1039/c5cp01320h
State	Published - 7 May 2015

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@article{1282091a972d44599e6277d77df7f21b,

title = "Large piezoelectric response of BiFeO3/BaTiO3 polycrystalline films induced by the low-symmetry phase",

abstract = "BaTiO3, BiFeO3 and BiFeO3/BaTiO3 polycrystalline films were prepared by the radio frequency magnetron sputtering on the Pt/Ti/SiO2/Si substrate. The phase structure, converse piezoelectric coefficient and domain structure of BaTiO3, BiFeO3 and BiFeO3/BaTiO3 thin films are characterized by XRD and PFM, respectively. The converse piezoelectric coefficient d33 of BiFeO3/BaTiO3 thin films is 119.5 pm V-1, which is comparable to that of lead-based piezoelectric films. The large piezoelectric response of BiFeO3/BaTiO3 thin films is ascribed to the low-symmetry T-like phase BiFeO3, because the spontaneous polarization vector of T-like phase (with monoclinic symmetry) BiFeO3 can rotate easily under external field. In addition, the reduced leakage current and major domains with upward polarization are also attributed to the large piezoelectricity.",

author = "Hou, \{Y. F.\} and Li, \{W. L.\} and Zhang, \{T. D.\} and W. Wang and Cao, \{W. P.\} and Liu, \{X. L.\} and Fei, \{W. D.\}",

note = "Publisher Copyright: {\textcopyright} 2015 the Owner Societies.",

year = "2015",

month = may,

day = "7",

doi = "10.1039/c5cp01320h",

language = "英语",

volume = "17",

pages = "11593--11597",

journal = "Physical Chemistry Chemical Physics",

issn = "1463-9076",

publisher = "Royal Society of Chemistry",

number = "17",

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TY - JOUR

T1 - Large piezoelectric response of BiFeO3/BaTiO3 polycrystalline films induced by the low-symmetry phase

AU - Hou, Y. F.

AU - Li, W. L.

AU - Zhang, T. D.

AU - Wang, W.

AU - Cao, W. P.

AU - Liu, X. L.

AU - Fei, W. D.

PY - 2015/5/7

Y1 - 2015/5/7

N2 - BaTiO3, BiFeO3 and BiFeO3/BaTiO3 polycrystalline films were prepared by the radio frequency magnetron sputtering on the Pt/Ti/SiO2/Si substrate. The phase structure, converse piezoelectric coefficient and domain structure of BaTiO3, BiFeO3 and BiFeO3/BaTiO3 thin films are characterized by XRD and PFM, respectively. The converse piezoelectric coefficient d33 of BiFeO3/BaTiO3 thin films is 119.5 pm V-1, which is comparable to that of lead-based piezoelectric films. The large piezoelectric response of BiFeO3/BaTiO3 thin films is ascribed to the low-symmetry T-like phase BiFeO3, because the spontaneous polarization vector of T-like phase (with monoclinic symmetry) BiFeO3 can rotate easily under external field. In addition, the reduced leakage current and major domains with upward polarization are also attributed to the large piezoelectricity.

AB - BaTiO3, BiFeO3 and BiFeO3/BaTiO3 polycrystalline films were prepared by the radio frequency magnetron sputtering on the Pt/Ti/SiO2/Si substrate. The phase structure, converse piezoelectric coefficient and domain structure of BaTiO3, BiFeO3 and BiFeO3/BaTiO3 thin films are characterized by XRD and PFM, respectively. The converse piezoelectric coefficient d33 of BiFeO3/BaTiO3 thin films is 119.5 pm V-1, which is comparable to that of lead-based piezoelectric films. The large piezoelectric response of BiFeO3/BaTiO3 thin films is ascribed to the low-symmetry T-like phase BiFeO3, because the spontaneous polarization vector of T-like phase (with monoclinic symmetry) BiFeO3 can rotate easily under external field. In addition, the reduced leakage current and major domains with upward polarization are also attributed to the large piezoelectricity.

UR - https://www.scopus.com/pages/publications/84929093472

U2 - 10.1039/c5cp01320h

DO - 10.1039/c5cp01320h

M3 - 文章

AN - SCOPUS:84929093472

SN - 1463-9076

VL - 17

SP - 11593

EP - 11597

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 17

ER -

Large piezoelectric response of BiFeO₃/BaTiO₃ polycrystalline films induced by the low-symmetry phase

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