LaNiO3 seed layer induced enhancement of piezoelectric properties in (100)-oriented (1-x)BZT-xBCT thin films

W. L. Li; T. D. Zhang; D. Xu; Y. F. Hou; W. P. Cao; W. D. Fei

doi:10.1016/j.jeurceramsoc.2015.01.018

LaNiO₃ seed layer induced enhancement of piezoelectric properties in (100)-oriented (1-x)BZT-xBCT thin films

W. L. Li^*
, T. D. Zhang
, D. Xu
, Y. F. Hou
, W. P. Cao
, W. D. Fei

^*Corresponding author for this work

School of Materials Science and Engineering

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

The (100)-oriented ferroelectric lead-free (1-x)Ba(Zr_0.2Ti_0.8)O₃-xBa_0.7Ca_0.3TiO₃ (BZT-xBCT) thin films were grown on Pt(111)/Ti/SiO₂/Si substrates by sol-gel method, and LaNiO₃ (LNO) seed layer was introduced between the film and the substrate. The insertion of LNO seed layer greatly improves the quality of the films and enhances the piezoelectric properties. Both of the compositions, x=0.50 and x=0.55, have relatively higher d₃₃ values around MPB, and the piezoelectric coefficient is 113.6pm/V and 131.5pm/V, respectively. The result of e{open}_r~T spectrum implies that dielectric permittivity has a weak temperature dependence from 30°C to 150°C.

Original language	English
Pages (from-to)	2041-2049
Number of pages	9
Journal	Journal of the European Ceramic Society
Volume	35
Issue number	7
DOIs	https://doi.org/10.1016/j.jeurceramsoc.2015.01.018
State	Published - 2015

Keywords

BZT-BCT film
LaNiO seed layer
Orientation
Piezoelectric properties

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10.1016/j.jeurceramsoc.2015.01.018

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@article{f3faa4d572dc4902b108229cb45b3f0d,

title = "LaNiO3 seed layer induced enhancement of piezoelectric properties in (100)-oriented (1-x)BZT-xBCT thin films",

abstract = "The (100)-oriented ferroelectric lead-free (1-x)Ba(Zr0.2Ti0.8)O3-xBa0.7Ca0.3TiO3 (BZT-xBCT) thin films were grown on Pt(111)/Ti/SiO2/Si substrates by sol-gel method, and LaNiO3 (LNO) seed layer was introduced between the film and the substrate. The insertion of LNO seed layer greatly improves the quality of the films and enhances the piezoelectric properties. Both of the compositions, x=0.50 and x=0.55, have relatively higher d33 values around MPB, and the piezoelectric coefficient is 113.6pm/V and 131.5pm/V, respectively. The result of e\{open\}r\textasciitilde{}T spectrum implies that dielectric permittivity has a weak temperature dependence from 30°C to 150°C.",

keywords = "BZT-BCT film, LaNiO seed layer, Orientation, Piezoelectric properties",

author = "Li, \{W. L.\} and Zhang, \{T. D.\} and D. Xu and Hou, \{Y. F.\} and Cao, \{W. P.\} and Fei, \{W. D.\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

year = "2015",

doi = "10.1016/j.jeurceramsoc.2015.01.018",

language = "英语",

volume = "35",

pages = "2041--2049",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier B.V.",

number = "7",

}

TY - JOUR

T1 - LaNiO3 seed layer induced enhancement of piezoelectric properties in (100)-oriented (1-x)BZT-xBCT thin films

AU - Li, W. L.

AU - Zhang, T. D.

AU - Xu, D.

AU - Hou, Y. F.

AU - Cao, W. P.

AU - Fei, W. D.

PY - 2015

Y1 - 2015

N2 - The (100)-oriented ferroelectric lead-free (1-x)Ba(Zr0.2Ti0.8)O3-xBa0.7Ca0.3TiO3 (BZT-xBCT) thin films were grown on Pt(111)/Ti/SiO2/Si substrates by sol-gel method, and LaNiO3 (LNO) seed layer was introduced between the film and the substrate. The insertion of LNO seed layer greatly improves the quality of the films and enhances the piezoelectric properties. Both of the compositions, x=0.50 and x=0.55, have relatively higher d33 values around MPB, and the piezoelectric coefficient is 113.6pm/V and 131.5pm/V, respectively. The result of e{open}r~T spectrum implies that dielectric permittivity has a weak temperature dependence from 30°C to 150°C.

AB - The (100)-oriented ferroelectric lead-free (1-x)Ba(Zr0.2Ti0.8)O3-xBa0.7Ca0.3TiO3 (BZT-xBCT) thin films were grown on Pt(111)/Ti/SiO2/Si substrates by sol-gel method, and LaNiO3 (LNO) seed layer was introduced between the film and the substrate. The insertion of LNO seed layer greatly improves the quality of the films and enhances the piezoelectric properties. Both of the compositions, x=0.50 and x=0.55, have relatively higher d33 values around MPB, and the piezoelectric coefficient is 113.6pm/V and 131.5pm/V, respectively. The result of e{open}r~T spectrum implies that dielectric permittivity has a weak temperature dependence from 30°C to 150°C.

KW - BZT-BCT film

KW - LaNiO seed layer

KW - Orientation

KW - Piezoelectric properties

UR - https://www.scopus.com/pages/publications/84933674192

U2 - 10.1016/j.jeurceramsoc.2015.01.018

DO - 10.1016/j.jeurceramsoc.2015.01.018

M3 - 文章

AN - SCOPUS:84933674192

SN - 0955-2219

VL - 35

SP - 2041

EP - 2049

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

IS - 7

ER -

LaNiO₃ seed layer induced enhancement of piezoelectric properties in (100)-oriented (1-x)BZT-xBCT thin films

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Keywords

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