Abstract
Amorphous hydrogenated carbon films were prepared by hot filament Plasma Enhanced Chemical Vapor Deposition using acetylene as precursor. NiP-coated Al substrate was sputtered with thin layer of ruthenium film prior to carbon deposition for its impact on carbon film growth. Film thickness measured and fitted using X-ray Reflectometry showed carbon film growth is an exothermic reaction with apparent activation energy of 914.6 J mol- 1 in the temperature range studied. Carbon film density and surface roughness changed with substrate temperature, more profound when substrate is pre-heated at 300 °C and above, in sync with abrupt ID/IG increase at temperature higher than 300 °C. Substrate temperature higher than 200 °C and below 300 °C is preferred for hard and dense structure. Higher deposition rate and porosity were observed at higher C2H2 flow rate due to more H incorporation. Film surface morphology studied by Atomic Force Microscope showed Root Mean Square roughness increased at higher C2H2 flow rate due to less energetic ion peening effect. Atomic bonding structure with sp2 and sp3 contents in the films deposited at varied temperature and C2H2 flow was analyzed using XPS.
| Original language | English |
|---|---|
| Pages (from-to) | 5202-5206 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 517 |
| Issue number | 17 |
| DOIs | |
| State | Published - 1 Jul 2009 |
| Externally published | Yes |
Keywords
- AFM
- DLC
- Raman spectroscopy
- Ruthenium interlayer
- XPS
- XRR
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