@inproceedings{21515128179f4991a8f72d7a74a397ce,
title = "Irradiation effects of 1 MeV electron on monolayer MoS2 field effect transistors",
abstract = "The effect of irradiation on monolayer MoS2 FET (field effect transistor) with 1 MeV electron beams was investigated. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) was measured before and after irradiation. The results show that electron irradiation produces a strong desulfurization effect. The electrical characteristics of the device were measured with fluence condition of 1.0{\texttimes}1012 and 3.0{\texttimes}1012cm-2. The channel leakage increases after irradiation while transfer and output current decrease. This phenomenon can be attributed to the combination of the states at the SiO2/MoS2 interfaces and Coulomb scattering. Our study will enhance the understanding of the influence of 1 MeV electron on MoS2-based nanoelectronics devices.",
keywords = "Electrical characteristics, Electron irradiation, Field effect transistor, MoS2",
author = "Yanqing Zhang and Guoliang Ma and Xuesong Zheng and Zhengyong Hua and Jiaming Zhou and Heyi Li and Chaoming Liu and Yidan Wei and Tianqi Wang and Chunhua Qi and Shangli Dong and Mingxue Huo",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019 ; Conference date: 02-07-2019 Through 05-07-2019",
year = "2019",
month = jul,
day = "1",
doi = "10.1109/IPFA47161.2019.8984891",
language = "英语",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "26th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2019",
address = "美国",
}