@inproceedings{692f644e5a664954803e9150ea57ad13,
title = "Invited Paper: Low-Temperature SiO2/SiO2 Wafer Direct Bonding by N2 Plasma Activation",
abstract = "Direct bonding is a promising technology in the semiconductor industry for achieving material stack integration. Traditional high-temperature bonding methods can introduce thermal stresses and defects that affect device performance and reliability. This paper proposes a low-temperature SiO2 wafer bonding technique based on non-oxidizing nitrogen plasma activation. Here, we show that fN\_2 plasma treatment significantly enriches the surface with functional groups, improving the chemical reactivity and surface energy, thus achieving a high bonding strength of ∼ 2.0 ∼J / m2. The mechanism of nitrogen plasma activation on surface modification and interfacial bonding was revealed by surface analysis and mechanical strength testing. This study is of great significance for the development of component fabrication, micro-electro-mechanical systems (MEMS) and optoelectronic devices.",
keywords = "bonding strength, integration, interface, surface activation, wafer bonding",
author = "Xiaohui Yuan and Linjie Liu and Xiangyu Zhou and Shijiao Xu and Chenxi Wang",
note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024 ; Conference date: 25-10-2024 Through 27-10-2024",
year = "2024",
doi = "10.1109/ICTA64028.2024.10860674",
language = "英语",
series = "2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "228--230",
booktitle = "2024 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2024",
address = "美国",
}