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Investigation of optical nonlinear properties in semiconductor GaN

  • Yu Fang
  • , Fei Ye
  • , Zhong Guo Li
  • , Zhao Yu Zong
  • , Ying Lin Song*
  • *Corresponding author for this work
  • Soochow University
  • Harbin Institute of Technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The optical nonlinearities of bulk GaN single crystal are investigated by conducting Z-scan experimental measurements, using nanosecond pulses at 532nm. The material's nonlinear absorptive and refractive optical nonlinearities are determined by measuring the normalized transmittance with and without an aperture in the far field. After simulating the experimental curves, the two-photon absorption (TPA) coefficient, especially the refractive-index change induced by two-photon-excited free carrier, are obtained. The experimental results show that GaN has reverse saturable absorption and self-defocusing effect at 532 nm, indicating this material is a good candidate for future photonics applications. The theoretical simulation fit well with experimental results.

Original languageEnglish
Title of host publicationInternational Symposium on Photoelectronic Detection and Imaging 2013
Subtitle of host publicationLaser Sensing and Imaging and Applications
DOIs
StatePublished - 2013
Event5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013 - Beijing, China
Duration: 25 Jun 201327 Jun 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8905
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference5th International Symposium on Photoelectronic Detection and Imaging, ISPDI 2013
Country/TerritoryChina
CityBeijing
Period25/06/1327/06/13

Keywords

  • Free-carrier
  • GaN
  • Optical nonlinearity
  • Two-photon absorption
  • Z-scan

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