TY - GEN
T1 - Investigation of electrostatic bonding time model with point cathode
AU - Tang, Jialu
AU - Liu, Xiaowei
AU - Zhang, Haifeng
AU - Wang, Xilian
PY - 2009
Y1 - 2009
N2 - This paper discusses a novel method of modeling and simulation of anodic bonding technique, which is widely used in fabrication of MEMS device and micro system. The emphasis are the bond expansion model and extended time formula of silicon-glass anodic bonding, and based on which, visual simulation of the process is achieved. In practical experiments, by utilizing the math model, simulation result matches well with the real process, perfectly displaying the electricity characteristics. This novel approach of simulation possesses high practicality, and additionally, will be important and valuable in the development ofMEMS technology and microelectronics.
AB - This paper discusses a novel method of modeling and simulation of anodic bonding technique, which is widely used in fabrication of MEMS device and micro system. The emphasis are the bond expansion model and extended time formula of silicon-glass anodic bonding, and based on which, visual simulation of the process is achieved. In practical experiments, by utilizing the math model, simulation result matches well with the real process, perfectly displaying the electricity characteristics. This novel approach of simulation possesses high practicality, and additionally, will be important and valuable in the development ofMEMS technology and microelectronics.
KW - Anodic bonding
KW - MEMS
KW - Process simulation
UR - https://www.scopus.com/pages/publications/70349676210
U2 - 10.1109/NEMS.2009.5068764
DO - 10.1109/NEMS.2009.5068764
M3 - 会议稿件
AN - SCOPUS:70349676210
SN - 9781424446308
T3 - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
SP - 1096
EP - 1098
BT - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
T2 - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2009
Y2 - 5 January 2009 through 8 January 2009
ER -