Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond

Kang Liu; Sen Zhang; Benjian Liu; Mingchun Xu; Zhengfeng Ren; Pengfei Qiao; Jingjing Xue; Xiaohui Zhang; Guoyang Shu; Jiwen Zhao; Mingqi Sun; Dzmitry Dzmitrovich; Lei Yang; Jiecai Han; Bing Dai; Jiaqi Zhu

doi:10.1016/j.carbon.2020.07.079

Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond

Kang Liu
, Sen Zhang
, Benjian Liu
, Mingchun Xu
, Zhengfeng Ren
, Pengfei Qiao
, Jingjing Xue
, Xiaohui Zhang
, Guoyang Shu
, Jiwen Zhao
, Mingqi Sun
, Dzmitry Dzmitrovich
, Lei Yang
, Jiecai Han
, Bing Dai^*
, Jiaqi Zhu^*

^*Corresponding author for this work

School of Astronautics

Shandong University
Harbin Institute of Technology
Ministry of Education of the People's Republic of China

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Oxygen-terminated type IIa (OT-IIa) diamond with oxygen suspended in the form of a ketone bond (C[dbnd]O) was synthesized via acid treatment. The Fermi level at 3.23 eV below the conduction band minimum for the OT-IIa diamond surface was measured experimentally, while that at 0.97 eV for the bulk was calculated theoretically. An acceptor model of the surface states was developed, employed, and combined with an upward-bending band diagram to compensate this energetic band difference between the surface and bulk of OT-IIa diamond. A Schottky barrier height of 3.15 eV between gold and the OT-IIa diamond was also measured. In addition, we also inferred the downward-bending band diagram for the surface of oxygen-terminated p-type diamond doped with boron. This work complements the semiconductor theory concerning diamond and will be helpful to analyze and improve the performance of devices based on oxygen-terminated diamond.

Original language	English
Pages (from-to)	440-445
Number of pages	6
Journal	Carbon
Volume	169
DOIs	https://doi.org/10.1016/j.carbon.2020.07.079
State	Published - Nov 2020

Keywords

Diamond
Energetic band
Fermi level
Oxygen terminal
Pinning effect
Surface states

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10.1016/j.carbon.2020.07.079

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@article{000f4c9e98a14a35b078061f6bc52dad,

title = "Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond",

abstract = "Oxygen-terminated type IIa (OT-IIa) diamond with oxygen suspended in the form of a ketone bond (C[dbnd]O) was synthesized via acid treatment. The Fermi level at 3.23 eV below the conduction band minimum for the OT-IIa diamond surface was measured experimentally, while that at 0.97 eV for the bulk was calculated theoretically. An acceptor model of the surface states was developed, employed, and combined with an upward-bending band diagram to compensate this energetic band difference between the surface and bulk of OT-IIa diamond. A Schottky barrier height of 3.15 eV between gold and the OT-IIa diamond was also measured. In addition, we also inferred the downward-bending band diagram for the surface of oxygen-terminated p-type diamond doped with boron. This work complements the semiconductor theory concerning diamond and will be helpful to analyze and improve the performance of devices based on oxygen-terminated diamond.",

keywords = "Diamond, Energetic band, Fermi level, Oxygen terminal, Pinning effect, Surface states",

author = "Kang Liu and Sen Zhang and Benjian Liu and Mingchun Xu and Zhengfeng Ren and Pengfei Qiao and Jingjing Xue and Xiaohui Zhang and Guoyang Shu and Jiwen Zhao and Mingqi Sun and Dzmitry Dzmitrovich and Lei Yang and Jiecai Han and Bing Dai and Jiaqi Zhu",

note = "Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = nov,

doi = "10.1016/j.carbon.2020.07.079",

language = "英语",

volume = "169",

pages = "440--445",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond

AU - Liu, Kang

AU - Zhang, Sen

AU - Liu, Benjian

AU - Xu, Mingchun

AU - Ren, Zhengfeng

AU - Qiao, Pengfei

AU - Xue, Jingjing

AU - Zhang, Xiaohui

AU - Shu, Guoyang

AU - Zhao, Jiwen

AU - Sun, Mingqi

AU - Dzmitrovich, Dzmitry

AU - Yang, Lei

AU - Han, Jiecai

AU - Dai, Bing

AU - Zhu, Jiaqi

PY - 2020/11

Y1 - 2020/11

N2 - Oxygen-terminated type IIa (OT-IIa) diamond with oxygen suspended in the form of a ketone bond (C[dbnd]O) was synthesized via acid treatment. The Fermi level at 3.23 eV below the conduction band minimum for the OT-IIa diamond surface was measured experimentally, while that at 0.97 eV for the bulk was calculated theoretically. An acceptor model of the surface states was developed, employed, and combined with an upward-bending band diagram to compensate this energetic band difference between the surface and bulk of OT-IIa diamond. A Schottky barrier height of 3.15 eV between gold and the OT-IIa diamond was also measured. In addition, we also inferred the downward-bending band diagram for the surface of oxygen-terminated p-type diamond doped with boron. This work complements the semiconductor theory concerning diamond and will be helpful to analyze and improve the performance of devices based on oxygen-terminated diamond.

AB - Oxygen-terminated type IIa (OT-IIa) diamond with oxygen suspended in the form of a ketone bond (C[dbnd]O) was synthesized via acid treatment. The Fermi level at 3.23 eV below the conduction band minimum for the OT-IIa diamond surface was measured experimentally, while that at 0.97 eV for the bulk was calculated theoretically. An acceptor model of the surface states was developed, employed, and combined with an upward-bending band diagram to compensate this energetic band difference between the surface and bulk of OT-IIa diamond. A Schottky barrier height of 3.15 eV between gold and the OT-IIa diamond was also measured. In addition, we also inferred the downward-bending band diagram for the surface of oxygen-terminated p-type diamond doped with boron. This work complements the semiconductor theory concerning diamond and will be helpful to analyze and improve the performance of devices based on oxygen-terminated diamond.

KW - Diamond

KW - Energetic band

KW - Fermi level

KW - Oxygen terminal

KW - Pinning effect

KW - Surface states

UR - https://www.scopus.com/pages/publications/85089675547

U2 - 10.1016/j.carbon.2020.07.079

DO - 10.1016/j.carbon.2020.07.079

M3 - 文章

AN - SCOPUS:85089675547

SN - 0008-6223

VL - 169

SP - 440

EP - 445

JO - Carbon

JF - Carbon

ER -

Investigating the energetic band diagrams of oxygen-terminated CVD grown e6 electronic grade diamond

Abstract

Keywords

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