Interface structure and photoelectric properties of heterojunction thin films materials

Meicheng Li; Wei Cai; Jinghua Yin; Xuekang Chen; Liancheng Zhao

Interface structure and photoelectric properties of heterojunction thin films materials

Meicheng Li^*
, Wei Cai
, Jinghua Yin
, Xuekang Chen
, Liancheng Zhao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

The phase formation, composition and interface structure of PtSi/Ge_xS_1-x/Si were monitored by AES and HREM, the Schottky and infrared absorption characteristics were investigated by I-V and FTIR. The preparation conditions of the high quality PtSi/Si nanometer size films by pulsed laser deposition and molecular beam epitaxy were explored. In addition, the effects of formation conditions and interface structure on the photoelectric properties were investigated also. The technical foundation is provided for the materials of high performance detectors.

Original language	English
Pages (from-to)	410-411
Number of pages	2
Journal	Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering
Volume	30
Issue number	SUPPL.
State	Published - 2001
Externally published	Yes

Keywords

Heterojunction
Infrared detectors
Interface structure
Photoelectric property
Photoelectric thin films

Cite this

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title = "Interface structure and photoelectric properties of heterojunction thin films materials",

abstract = "The phase formation, composition and interface structure of PtSi/GexS1-x/Si were monitored by AES and HREM, the Schottky and infrared absorption characteristics were investigated by I-V and FTIR. The preparation conditions of the high quality PtSi/Si nanometer size films by pulsed laser deposition and molecular beam epitaxy were explored. In addition, the effects of formation conditions and interface structure on the photoelectric properties were investigated also. The technical foundation is provided for the materials of high performance detectors.",

keywords = "Heterojunction, Infrared detectors, Interface structure, Photoelectric property, Photoelectric thin films",

author = "Meicheng Li and Wei Cai and Jinghua Yin and Xuekang Chen and Liancheng Zhao",

year = "2001",

language = "英语",

volume = "30",

pages = "410--411",

journal = "Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering",

issn = "1002-185X",

publisher = "Science Press ",

number = "SUPPL.",

}

TY - JOUR

T1 - Interface structure and photoelectric properties of heterojunction thin films materials

AU - Li, Meicheng

AU - Cai, Wei

AU - Yin, Jinghua

AU - Chen, Xuekang

AU - Zhao, Liancheng

PY - 2001

Y1 - 2001

N2 - The phase formation, composition and interface structure of PtSi/GexS1-x/Si were monitored by AES and HREM, the Schottky and infrared absorption characteristics were investigated by I-V and FTIR. The preparation conditions of the high quality PtSi/Si nanometer size films by pulsed laser deposition and molecular beam epitaxy were explored. In addition, the effects of formation conditions and interface structure on the photoelectric properties were investigated also. The technical foundation is provided for the materials of high performance detectors.

AB - The phase formation, composition and interface structure of PtSi/GexS1-x/Si were monitored by AES and HREM, the Schottky and infrared absorption characteristics were investigated by I-V and FTIR. The preparation conditions of the high quality PtSi/Si nanometer size films by pulsed laser deposition and molecular beam epitaxy were explored. In addition, the effects of formation conditions and interface structure on the photoelectric properties were investigated also. The technical foundation is provided for the materials of high performance detectors.

KW - Heterojunction

KW - Infrared detectors

KW - Interface structure

KW - Photoelectric property

KW - Photoelectric thin films

UR - https://www.scopus.com/pages/publications/24044445672

M3 - 文章

AN - SCOPUS:24044445672

SN - 1002-185X

VL - 30

SP - 410

EP - 411

JO - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

JF - Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering

IS - SUPPL.

ER -

Interface structure and photoelectric properties of heterojunction thin films materials

Abstract

Keywords

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