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Interface structure and formation mechanism of diffusion-bonded SiC/TiAl joint

  • Harbin Institute of Technology

Research output: Contribution to journalArticlepeer-review

Abstract

The interface structures and formation mechanism of diffusion-bonded SiC/TiAl joints were studied to lay a foundation for the practical use of SiC/TiAl joints. The morphologies, crystal structures and chemical compositions of the formed phases were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and electron probe X-ray microanalysis (EPMA). Back-scattered electron image of the cross-section of the SiC/TiAl joint bonded at 1573 K for 14.4 ks showed that three kinds of reaction layers occurred between SiC and TiAl. The interface structure of diffusion-bonded SiC/TiAl joints is SiC/TiC/(Ti5Si3Cx+TiC)/(TiAl+TiAl2)/TiAl.

Original languageEnglish
Pages (from-to)1011-1012
Number of pages2
JournalJournal of Materials Science Letters
Volume18
Issue number13
DOIs
StatePublished - 1999

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