Abstract
The interface structures and formation mechanism of diffusion-bonded SiC/TiAl joints were studied to lay a foundation for the practical use of SiC/TiAl joints. The morphologies, crystal structures and chemical compositions of the formed phases were investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), and electron probe X-ray microanalysis (EPMA). Back-scattered electron image of the cross-section of the SiC/TiAl joint bonded at 1573 K for 14.4 ks showed that three kinds of reaction layers occurred between SiC and TiAl. The interface structure of diffusion-bonded SiC/TiAl joints is SiC/TiC/(Ti5Si3Cx+TiC)/(TiAl+TiAl2)/TiAl.
| Original language | English |
|---|---|
| Pages (from-to) | 1011-1012 |
| Number of pages | 2 |
| Journal | Journal of Materials Science Letters |
| Volume | 18 |
| Issue number | 13 |
| DOIs | |
| State | Published - 1999 |
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