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Intensity noise and pulse oscillations of an InAs/GaAs quantum dot laser on germanium

  • Yue Guang Zhou
  • , Jianan Duan
  • , Heming Huang
  • , Xu Yi Zhao
  • , Chun Fang Cao
  • , Qian Gong
  • , Frederic Grillot
  • , Cheng Wang*
  • *Corresponding author for this work
  • ShanghaiTech University
  • Télécom ParisTech
  • CAS - Shanghai Institute of Microsystem and Information Technology
  • University of New Mexico

Research output: Contribution to journalArticlepeer-review

Abstract

This paper investigates the intensity noise and pulse oscillation characteristics of an InAs/GaAs quantum dot laser epitaxially grown on germanium. We show that the relative intensity noise of the free-running laser generally decreases with increasing pump current, and the minimum value reaches down to about -126 dB/Hz. The intensity noise is hardly affected by the optical feedback, unless there is a resonance or pulse oscillation in the noise spectrum. The laser pumped at a high current is more sensitive to the optical feedback. Interestingly, it is found that the free-running Ge-based quantum dot laser generates self-sustained pulse oscillations with one period or two periods upon the pump current, without incorporating saturable absorbers. This behavior is valuable for both self-generation of photonic microwaves and for understanding nonlinear dynamics of semiconductor lasers.

Original languageEnglish
Article number8717669
JournalIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Issue number6
DOIs
StatePublished - 1 Nov 2019
Externally publishedYes

Keywords

  • Q switching
  • Quantum dot laser
  • intensity noise
  • nonlinear dynamics
  • optical feedback
  • silicon photonics

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