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Integration of green CuInS2/ZnS quantum dots for high-efficiency light-emitting diodes and high-responsivity photodetectors

  • Feng Li
  • , Chenyang Guo
  • , Rui Pan
  • , Yaoyao Zhu
  • , Lai You
  • , Jun Wang
  • , Xiao Jin
  • , Qin Zhang
  • , Yinglin Song
  • , Zhongping Chen
  • , Qinghua Li
  • Nanchang Hangkong University
  • University of Electronic Science and Technology of China

Research output: Contribution to journalArticlepeer-review

Abstract

Ternary I-III-VI quantum dots (QDs) have been regarded as an alternative to Cdand Pb-based QDs because of their appealing optoelectronic properties and their deficiency in highly toxic components. In this paper, we present the synthesis of highly luminous and emission-tunable CuInS2/ZnS core/shell QDs and their application to the fabrication of highly efficient electroluminescent QD light-emitting diodes (QLEDs). To evaluate the possibility of applying CuInS2/ZnS QDs to photodetectors (PDs), the CuInS2/ZnS-graphene hybrid PDs with a high-responsivity were successfully constructed for the first time. In this study, QLEDs based on the as-prepared CuInS2/ZnS core/shell QDs exhibited a high external quantum efficiency of 3.36% at a forward current of 2.8 V, which is higher than that of CuInS2-based electroluminescent QLEDs reported previously. The resulting PD exhibited a surprisingly high responsivity of 35 A/W. CuInS2/ZnS QDs provide new opportunities for the fabrication of non-toxic QLEDs and PDs exhibiting high performances and are promising for future applications in the field of optoelectronic devices.

Original languageEnglish
Pages (from-to)314-323
Number of pages10
JournalOptical Materials Express
Volume8
Issue number2
DOIs
StatePublished - 1 Feb 2018

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