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Integration of chalcogenide-based phase change materials and metasurfaces

  • Xinbo Sha*
  • , Qi Liu
  • , Yixuan Zeng
  • , Yubin Fan
  • , Chen Zhang
  • , Fangxing Lai
  • , Yuhan Wang
  • , Yilin Liu
  • , Qinghai Song
  • , Lei Wang*
  • , Shumin Xiao*
  • *Corresponding author for this work
  • Pengcheng Laboratory
  • Harbin Institute of Technology Shenzhen
  • Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong)
  • Shanxi University

Research output: Contribution to journalReview articlepeer-review

Abstract

Metasurfaces exhibit excellent performance in optical field modulation, but traditional designs are typically fixed once manufactured, which limits their adaptability to dynamic tuning requirements. Then, tunable materials, such as phase change materials (PCMs), have attracted significant attention in nanophotonics due to their ability to reversibly modulate optical and electrical properties through structural phase transitions. Among these, chalcogenide-based PCMs offer distinct advantages over alternatives such as VO2 and graphene, including lower optical loss and superior phase stability. Integrating chalcogenide PCMs with metasurfaces is therefore anticipated to expand their application potential across emerging photonic fields. This review systematically summarizes recent progress in the integration of chalcogenide PCMs and metasurfaces. Key phase‐transition mechanisms—photo‐induced and electrically driven—as well as integration strategies (direct and indirect) are outlined, along with their respective advantages and limitations. Furthermore, several application areas and future development directions for chalcogenide PCM–metasurface-integrated devices are discussed.

Original languageEnglish
Article number031302
JournalApplied Physics Reviews
Volume13
Issue number3
DOIs
StatePublished - 1 Sep 2026
Externally publishedYes

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