In₃SbTe₂ phase-change film for multifunctional dynamic infrared thermal emitter

Dynamic infrared thermal-radiation modulation technology has garnered significant attention for its ability to overcome the limitations of static techniques and broaden its range of applications. This study presents a dynamically tunable infrared thermal emitter based on near-zero permittivity films and In₃SbTe₂ (IST) phase-change materials. The device employs a multilayer thin-film structure, achieving dynamic switching of infrared functionality via laser-controlled phase transitions between the crystalline and amorphous states of IST. Simulation results indicate that, when IST is in the crystalline state, the device exhibits an average emissivity higher than 0.8 in the 9.9–14.9 μm band for p-polarized light within the incident-angle range of 69°–83°, making it suitable for applications in infrared stealth and heat dissipation. When IST is in the amorphous state, the device exhibits an average transmittance higher than 0.7 in the 3.0–5.0 μm band and higher than 0.6 in the 8.0–12.0 μm band for p-polarized light over incident angles of 0°–80°. This emitter operates without static power consumption and allows for reversible switching among infrared stealth, heat dissipation, and transmission functions. This multifunctional emitter shows promising application potential in aerospace thermal management, precision thermal control, and energy recovery.