Instrumentation and application of the ion beam analysis line of the in situ ion beam system

Zhi Hong Huang; Zao Di Zhang; Ze Song Wang; Lang Ping Wang; De Jun Fu

doi:10.13538/j.1001-8042/nst.26.010202

Instrumentation and application of the ion beam analysis line of the in situ ion beam system

Zhi Hong Huang
, Zao Di Zhang
, Ze Song Wang
, Lang Ping Wang
, De Jun Fu^*

^*Corresponding author for this work

School of Materials Science and Engineering

Wuhan University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO₃:La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO₃:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (χ_min = 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.

Original language	English
Article number	010202
Journal	Nuclear Science and Techniques
Volume	26
Issue number	1
DOIs	https://doi.org/10.13538/j.1001-8042/nst.26.010202
State	Published - 2 Feb 2015

Keywords

Channeling
Ion beam analysis
Non-Rutherford elastic backscattering
Rutherford backscattering

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10.13538/j.1001-8042/nst.26.010202

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title = "Instrumentation and application of the ion beam analysis line of the in situ ion beam system",

abstract = "An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3:La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (χmin = 3.01\%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.",

keywords = "Channeling, Ion beam analysis, Non-Rutherford elastic backscattering, Rutherford backscattering",

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doi = "10.13538/j.1001-8042/nst.26.010202",

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T1 - Instrumentation and application of the ion beam analysis line of the in situ ion beam system

AU - Huang, Zhi Hong

AU - Zhang, Zao Di

AU - Wang, Ze Song

AU - Wang, Lang Ping

AU - Fu, De Jun

PY - 2015/2/2

Y1 - 2015/2/2

N2 - An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3:La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (χmin = 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.

AB - An ion beam analysis system was established on a 1.7 MV tandem accelerator, enabling Rutherford backscattering (RBS), elastic recoil detection (ERD), nuclear reaction analysis (NRA) and channeling measurements. The system was tested by performing qualitative and quantitative analysis of Si, Ni/Si, BiFeO3:La/Si, MoC/Mo/Si and TiBN/Si samples. RBS of a BiFeO3:La film was used as system calibration. Tested by ion beam channeling, a Si(100) is of good crystallinity (χmin = 3.01%). For thin film samples, the measured thickness agrees well with simulation results by SIMNRA. In particular, composition of a MoC/Mo/Si and TiBN film samples were analyzed by RBS and non-Rutherford elastic backscattering.

KW - Channeling

KW - Ion beam analysis

KW - Non-Rutherford elastic backscattering

KW - Rutherford backscattering

UR - https://www.scopus.com/pages/publications/84969753224

U2 - 10.13538/j.1001-8042/nst.26.010202

DO - 10.13538/j.1001-8042/nst.26.010202

M3 - 文章

AN - SCOPUS:84969753224

SN - 1001-8042

VL - 26

JO - Nuclear Science and Techniques

JF - Nuclear Science and Techniques

IS - 1

M1 - 010202

ER -

Instrumentation and application of the ion beam analysis line of the in situ ion beam system

Abstract

Keywords

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