Insights into effects of thermal annealing on optical properties of SiO2 films

Yugang Jiang; Yiqin Ji; Huasong Liu; Dandan Liu; Lishuan Wang; Chenghui Jiang; Yaping Yang; Deying Chen

doi:10.1117/12.974980

Insights into effects of thermal annealing on optical properties of SiO₂ films

Yugang Jiang^*
, Yiqin Ji
, Huasong Liu
, Dandan Liu
, Lishuan Wang
, Chenghui Jiang
, Yaping Yang
, Deying Chen

^*Corresponding author for this work

School of Astronautics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

16 Scopus citations

Abstract

Annealing is an important method to alter the properties of thin films. The effects of thermal treatment in air on optical properties of SiO₂ thin films were investigated. SiO₂ thin films were deposited on Si (110) substrates by an ion beam sputtering (IBS) technique, and then annealed in air under different thermal annealing time of 16 hours, 24 hours, 36 hours, 64 hours and the temperature from 100°C to 600°C with 24 hours. Optical properties refractive index and thickness are studied directly after deposition and after thermal treatment, and they are measured by spectroscopic ellipsometry. When the thermal annealing temperature was fixed at 300°C, the refractive index of SiO₂ films would reduce with the increase of the thermal annealing time, the optical thickness also reduced but the various quantities are almost the same. The refractive index of SiO₂ films changed with the different thermal annealing temperature. As the annealing temperature increased, the refractive index of SiO₂ films reduced gradually. When the selected annealing temperature is 500°C, the refractive index of SiO₂ films reached minimum. It can be found that the optical properties of SiO₂ thin films can be improved by an adapted annealing procedure.

Original language	English
Title of host publication	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies
Subtitle of host publication	Advanced Optical Manufacturing Technologies
DOIs	https://doi.org/10.1117/12.974980
State	Published - 2012
Event	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies - Xiamen, China Duration: 26 Apr 2012 → 29 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8416
ISSN (Print)	0277-786X

Conference

Conference	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies
Country/Territory	China
City	Xiamen
Period	26/04/12 → 29/04/12

Keywords

Annealing
Ion beam sputtering
Optical thickness
Refractive index
SiO films

Access to Document

10.1117/12.974980

Cite this

Jiang, Y., Ji, Y., Liu, H., Liu, D., Wang, L., Jiang, C., Yang, Y., & Chen, D. (2012). Insights into effects of thermal annealing on optical properties of SiO₂ films. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies Article 84160F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8416). https://doi.org/10.1117/12.974980

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title = "Insights into effects of thermal annealing on optical properties of SiO2 films",

abstract = "Annealing is an important method to alter the properties of thin films. The effects of thermal treatment in air on optical properties of SiO2 thin films were investigated. SiO2 thin films were deposited on Si (110) substrates by an ion beam sputtering (IBS) technique, and then annealed in air under different thermal annealing time of 16 hours, 24 hours, 36 hours, 64 hours and the temperature from 100°C to 600°C with 24 hours. Optical properties refractive index and thickness are studied directly after deposition and after thermal treatment, and they are measured by spectroscopic ellipsometry. When the thermal annealing temperature was fixed at 300°C, the refractive index of SiO2 films would reduce with the increase of the thermal annealing time, the optical thickness also reduced but the various quantities are almost the same. The refractive index of SiO2 films changed with the different thermal annealing temperature. As the annealing temperature increased, the refractive index of SiO2 films reduced gradually. When the selected annealing temperature is 500°C, the refractive index of SiO2 films reached minimum. It can be found that the optical properties of SiO2 thin films can be improved by an adapted annealing procedure.",

keywords = "Annealing, Ion beam sputtering, Optical thickness, Refractive index, SiO films",

author = "Yugang Jiang and Yiqin Ji and Huasong Liu and Dandan Liu and Lishuan Wang and Chenghui Jiang and Yaping Yang and Deying Chen",

year = "2012",

doi = "10.1117/12.974980",

language = "英语",

isbn = "9780819490988",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies",

note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies ; Conference date: 26-04-2012 Through 29-04-2012",

}

Jiang, Y, Ji, Y, Liu, H, Liu, D, Wang, L, Jiang, C, Yang, Y & Chen, D 2012, Insights into effects of thermal annealing on optical properties of SiO₂ films. in 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies., 84160F, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8416, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies, Xiamen, China, 26/04/12. https://doi.org/10.1117/12.974980

Insights into effects of thermal annealing on optical properties of SiO₂ films. / Jiang, Yugang; Ji, Yiqin; Liu, Huasong et al.
6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies. 2012. 84160F (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8416).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Jiang, Yugang

AU - Ji, Yiqin

AU - Liu, Huasong

AU - Liu, Dandan

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AU - Jiang, Chenghui

AU - Yang, Yaping

AU - Chen, Deying

PY - 2012

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N2 - Annealing is an important method to alter the properties of thin films. The effects of thermal treatment in air on optical properties of SiO2 thin films were investigated. SiO2 thin films were deposited on Si (110) substrates by an ion beam sputtering (IBS) technique, and then annealed in air under different thermal annealing time of 16 hours, 24 hours, 36 hours, 64 hours and the temperature from 100°C to 600°C with 24 hours. Optical properties refractive index and thickness are studied directly after deposition and after thermal treatment, and they are measured by spectroscopic ellipsometry. When the thermal annealing temperature was fixed at 300°C, the refractive index of SiO2 films would reduce with the increase of the thermal annealing time, the optical thickness also reduced but the various quantities are almost the same. The refractive index of SiO2 films changed with the different thermal annealing temperature. As the annealing temperature increased, the refractive index of SiO2 films reduced gradually. When the selected annealing temperature is 500°C, the refractive index of SiO2 films reached minimum. It can be found that the optical properties of SiO2 thin films can be improved by an adapted annealing procedure.

AB - Annealing is an important method to alter the properties of thin films. The effects of thermal treatment in air on optical properties of SiO2 thin films were investigated. SiO2 thin films were deposited on Si (110) substrates by an ion beam sputtering (IBS) technique, and then annealed in air under different thermal annealing time of 16 hours, 24 hours, 36 hours, 64 hours and the temperature from 100°C to 600°C with 24 hours. Optical properties refractive index and thickness are studied directly after deposition and after thermal treatment, and they are measured by spectroscopic ellipsometry. When the thermal annealing temperature was fixed at 300°C, the refractive index of SiO2 films would reduce with the increase of the thermal annealing time, the optical thickness also reduced but the various quantities are almost the same. The refractive index of SiO2 films changed with the different thermal annealing temperature. As the annealing temperature increased, the refractive index of SiO2 films reduced gradually. When the selected annealing temperature is 500°C, the refractive index of SiO2 films reached minimum. It can be found that the optical properties of SiO2 thin films can be improved by an adapted annealing procedure.

KW - Annealing

KW - Ion beam sputtering

KW - Optical thickness

KW - Refractive index

KW - SiO films

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T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies

T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies

Y2 - 26 April 2012 through 29 April 2012

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Jiang Y, Ji Y, Liu H, Liu D, Wang L, Jiang C et al. Insights into effects of thermal annealing on optical properties of SiO₂ films. In 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Advanced Optical Manufacturing Technologies. 2012. 84160F. (Proceedings of SPIE - The International Society for Optical Engineering). doi: 10.1117/12.974980