InGaAs/GaAs saturable absorber for diode-pumped passively q-switched mode-locking of Tm:YAP laser

B. Q. Yao; W. Wang; Y. Tian; G. Li; Y. Z. Wang

doi:10.1134/S1054660X11210304

InGaAs/GaAs saturable absorber for diode-pumped passively q-switched mode-locking of Tm:YAP laser

B. Q. Yao^*
, W. Wang
, Y. Tian
, G. Li
, Y. Z. Wang

^*Corresponding author for this work

School of Astronautics

Harbin Institute of Technology

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02.

Original language	English
Pages (from-to)	2020-2024
Number of pages	5
Journal	Laser Physics
Volume	21
Issue number	12
DOIs	https://doi.org/10.1134/S1054660X11210304
State	Published - Dec 2011

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title = "InGaAs/GaAs saturable absorber for diode-pumped passively q-switched mode-locking of Tm:YAP laser",

abstract = "A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02.",

author = "Yao, \{B. Q.\} and W. Wang and Y. Tian and G. Li and Wang, \{Y. Z.\}",

year = "2011",

month = dec,

doi = "10.1134/S1054660X11210304",

language = "英语",

volume = "21",

pages = "2020--2024",

journal = "Laser Physics",

issn = "1054-660X",

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T1 - InGaAs/GaAs saturable absorber for diode-pumped passively q-switched mode-locking of Tm:YAP laser

AU - Yao, B. Q.

AU - Wang, W.

AU - Tian, Y.

AU - Li, G.

AU - Wang, Y. Z.

PY - 2011/12

Y1 - 2011/12

N2 - A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02.

AB - A passively Q-switched mode-locking of diode-pumped TmYAP laser by use of InGaAs/GaAs as a saturable absorber is reported. The maximum Q-switched mode-locking output power was 480 mW near the wavelength range of 1.94 μm with pulse repetition frequency of 26.47 kHz. The beam quality was also measured to be 1.12 ± 0.02.

UR - https://www.scopus.com/pages/publications/84855891897

U2 - 10.1134/S1054660X11210304

DO - 10.1134/S1054660X11210304

M3 - 文章

AN - SCOPUS:84855891897

SN - 1054-660X

VL - 21

SP - 2020

EP - 2024

JO - Laser Physics

JF - Laser Physics

IS - 12

ER -

InGaAs/GaAs saturable absorber for diode-pumped passively q-switched mode-locking of Tm:YAP laser

Abstract

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